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Silver Related Deep Levels in Silicon

Pandian, V and Kumar, V (1988) Silver Related Deep Levels in Silicon. In: Physica Status Solidi (a), 109 (1). pp. 273-278.

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The properties of silver impurity levels in silicon are studied. Activation enthalpies of 0.56 eV from the conduction band for the acceptor level and 0.33 eV from the valence band for the donor level are determined using C(U)and DLTS. The directly measured thermal electron capture cross section of the acceptor level equals to $\sigma_n$ = 3.0 X $10^{-16}$ $cm^2$ and the hole capture cross section of the donor level to $\sigma_p$ = 3.1 x $10^{-16}$ $cm^2$. Both the cress sections are temperature independent in the measurement range. The entropy factors of the acceptor and donor levels are estimated to be about 15. Es werden die Eigenschaften von Silberstorstellenniveaus in Silizium untersucht. Mittels C( U) und DLTS werden Aktivierungsenthalpien von 0,56 eV unterhalb des Leitungsbandes fur das Akzeptorniveau und 0,33 eV oberhalb des Valenzbandes fur das Donatorniveau crmittelt. Der direkt gemessene therrnische Elektroneneinfangquerschnitt des Akzeptorniveaus betragt $\sigma_p$ = 3,0 x x $cm^2$ und der Lochereinfangquerschnitt des Donatorniveaus $\sigma^p$ = 3,l x $10^{-16}$$cm^2$. Beide Wirkungsquerschnitte sind im gemessenen Bereich temperaturunabhiingig. Die Entropicfaktoren des Akzeptor- und Donatorniveaus werden zu ehwa 15 besbimmt.

Item Type: Journal Article
Publication: Physica Status Solidi (a)
Publisher: WILEY-VCH Verlag GmbH
Additional Information: Copyright of this article belongs to John Wiley & Sons.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 11 Mar 2008
Last Modified: 19 Sep 2010 04:43
URI: http://eprints.iisc.ac.in/id/eprint/13360

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