Thin films of $VO_2$ on glass by atomic layer deposition: microstructure and electrical properties

Dagur, Pritesh and Mane, Anil U and Shivashankar, SA (2005) Thin films of $VO_2$ on glass by atomic layer deposition: microstructure and electrical properties. In: Journal of Crystal Growth, 275 (1-2). e1223-e1228.

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Abstract

Thin films of semiconducting, monoclinic, $VO_2$(M) have been deposited on glass by atomic layer deposition (ALD). The composition and microstructure of the films have been examined by X-ray diffraction and scanning electron microscopy (SEM). The films deposited are $VO_2$(M) phase, as deposited, and have been obtained at temperatures as low as 400 1C. The films comprise largely of platelet morphology as illustrated by SEM. The semiconductor-metal transition near 340K leads to a large jump in resistivity in all the $VO_2$(M) films, on glass, as deposited. The formation of $VO_2$(M) phase has been shown to occur under very specific ALD conditions (ALD window). Growth kinetics, microstructure, and electrical properties have been studied as a function of deposition temperature.

Item Type:	Journal Article
Publication:	Journal of Crystal Growth
Publisher:	Elsevier
Additional Information:	Copyright of this article belongs to Elsevier.
Keywords:	A1. Characterization; A1. Substrates; A1. X-ray diffraction; A2. Polycrystalline deposition; B1. Oxides; B2. Semiconducting materials; B2. Infrared devices.
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	09 Mar 2008
Last Modified:	19 Sep 2010 04:43
URI:	http://eprints.iisc.ac.in/id/eprint/13359

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