ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Raman and high-pressure photoluminescence studies on porous silicon

Sood, AK and Jayaram, K and Muthu, DVS (1992) Raman and high-pressure photoluminescence studies on porous silicon. In: Journal of Applied Physics, 72 (10). pp. 4963-4965.

[img] PDF
Restricted to Registered users only

Download (371kB) | Request a copy


We show that there is no correlation between the blue shift of the visible photoluminescence band and red shift of the Raman phonon line in porous silicon, in contrast to the recently reported results. We also report a drastic red shift of the photoluminescence peak position with pressure up to 6 GPa and show that this is much larger than that of the crystalline silicon. These observations cast doubt on the suggested mechanism of quantum size effects in porous silicon.

Item Type: Journal Article
Publication: Journal of Applied Physics
Publisher: The American Institute of Physics
Additional Information: Copyright of this article belongs to The American Institute of Physics.
Keywords: photoluminescence;porous silicon;Raman phonon line
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 18 Dec 2007
Last Modified: 19 Sep 2010 04:42
URI: http://eprints.iisc.ac.in/id/eprint/12772

Actions (login required)

View Item View Item