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Investigations on diamond films synthesized in combustion flames at atmospheric pressures

Solomon, Harshavardhan K (1990) Investigations on diamond films synthesized in combustion flames at atmospheric pressures. In: Proceedings of SPIE-The International Society for Optical Engineering, 1325 (3). pp. 283-293.

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Exptl. investigations on diamond films prepd. in oxy-acetylene combustion flames at atm. pressures were carried out by a detailed anal. of laser Raman spectroscopy, SEM, high resoln. electron diffraction, XPS and Auger electron spectroscopy. The Raman spectra of the films deposited on Si (100) substrates clearly indicate a well defined $1334 cm^{-1}$ signature of the sp3 bonded carbon (diamond). A systematic Raman anal. was carried out to establish the mixed nature of the carbon bonding in these films by monitoring the $1334 cm^{-1}$ line as well as the $1350 cm^{-1}$ D line and $1580 cm^{-1}$ G line, both reminescent of the sp2 bonded graphitic Raman signatures of carbon. The optimum deposition conditions necessary for obtaining a predominant diamond film growth were thus established. The scanning electron microscopic investigations indicate that the growth morphologies of the films are dominated by {111} and {100} surfaces. The morphol. features have a spatial variation and also exhibit ball-like features along with the well faceted crystallites. The electron diffraction studies establish cubic diamond crystal structure with a lattice parameter of 3.55 .ANG.. The high resoln. studies also indicate the presence of other impurity phases, the origin of which are attributed to the thermodynamically non-uniform situation at the substrate-gas interface. Core level photo-electron spectroscopic studies carried by monitoring the Si (2p) and C (1s) core levels at 98.1 and 285 eV resp. and Si Auger electron spectra at 1618.6 eV suggest SiC formation. The primary combustion zone which provides an ideal situation for the diamond growth was profiled spatially along with the other zones of the flame. The diagnostics carried out therein between 300 and 700 nm indicate the presence of active precursors such as CH and C2, along with at. and mol. hydrogen and at. oxygen which are responsible for diamond growth.

Item Type: Journal Article
Publication: Proceedings of SPIE-The International Society for Optical Engineering
Publisher: SPIE The International Society for Optical Engineering
Additional Information: Copyright of this article belongs to SPIE-The International Society for Optical Engineering.
Keywords: diamond films;combustion flames;atmospheric pressures;Raman spectroscopy
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 19 Dec 2007
Last Modified: 08 Feb 2012 07:16
URI: http://eprints.iisc.ac.in/id/eprint/12567

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