Off-centered polarization and ferroelectric phase transition in Li-doped ZnO thin films grown by pulsed-laser ablation

Dhananjay, * and Nagaraju, J and Krupanidhi, SB (2007) Off-centered polarization and ferroelectric phase transition in Li-doped ZnO thin films grown by pulsed-laser ablation. In: Journal of Applied Physics, 101 . 104104-1-104104-7.

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Abstract

Li-doped ZnO $(Zn_{1-x}Li_xO, x=0.15)$ thin films have been grown on platinum-coated silicon substrates via pulsed-laser ablation. The films were grown at fixed substrate temperature of $500^oC$ and different partial pressure of oxygen $(PO_2\sim 100-300 \hspace{2mm} mTorr)$. The films showed (002) preferred orientation. The doping concentration and built-in potential were estimated from the capacitance-voltage characteristics. In order to investigate the phase transition behavior of the films, (dc) conductivity and dielectric measurements were conducted. The phase transition temperature was found to be 330 K. The activation energy dc has been found to be 0.05 and 0.28 eV in ferroelectric and paraelectric phases, respectively. The $Zn_{0.85}Li_{015}O$ thin films exhibited well-defined polarization hysteresis loop, with a remanent polarization of $0.2 \mu C/cm^2$ and coercive field of 25 kV/cm, at room temperature. The conduction mechanism of the laser ablated $Zn_{0.85}Li_{015}O$ films was analyzed in the light of impedance spectroscopy.

Item Type:	Journal Article
Publication:	Journal of Applied Physics
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics Division of Chemical Sciences > Materials Research Centre
Date Deposited:	15 Oct 2007
Last Modified:	19 Sep 2010 04:39
URI:	http://eprints.iisc.ac.in/id/eprint/11761

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