Ramkumar, K and Satyam, M (1990) Brief communication.New static RAM cell based on the unijunction transistor. In: International Journal of Electronics, 68 (2). 195 - 199.
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Official URL: http://www.tandfonline.com/doi/abs/10.1080/0020721...
Abstract
A new static RAM cell is proposed based on the negative resistance in the output V-I characteristic of a unijunction transistor.
| Item Type: | Journal Article |
|---|---|
| Publication: | International Journal of Electronics |
| Publisher: | Taylor and Francis Group |
| Additional Information: | Copyright of this article belongs to Taylor and Francis Group. |
| Department/Centre: | Division of Electrical Sciences > Electrical Communication Engineering |
| Date Deposited: | 16 Jul 2007 |
| Last Modified: | 30 Jan 2012 05:56 |
| URI: | http://eprints.iisc.ac.in/id/eprint/11574 |
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