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Passivation of surface and bulk defects in InP

Balasubramanian, S and Kumar, V and Balasubramanian, N and Premachandran, V (1992) Passivation of surface and bulk defects in InP. In: Defect Engineering in Semiconductor Growth, Processing and Device Technology Symposium, 26 April-1 May 1992, San Francisco, CA, USA, pp. 413-418.

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The effect of sulfur and hydrogen plasma treatment on the Schottky barrier and photoluminescence (PL) properties of p-InP is reported. Both the treatments increase the barrier height of Au/p-InP diodes and band to band PL. This is explained as being due to a shift in the surface Fermi level position towards the P vacancy related pinning level in the top half of the band gap. The $H^+$ treatment passivates the shallow and deep levels as observed from the C-V depth profile and PL respectively.

Item Type: Conference Paper
Publisher: Materials Research Society
Additional Information: Copyright of this article belongs to Materials Research Society .
Keywords: deep levels;defect electron energy states;Fermi level; hydrogen;III-V semiconductors;impurity electron states; indium compounds;luminescence of inorganic solids; passivation;photoluminescence;Schottky effect;sulphur; surface electron states;vacancies (crystal);zinc
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 11 Jan 2008
Last Modified: 12 Jan 2012 07:14
URI: http://eprints.iisc.ac.in/id/eprint/11142

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