Properties of GaAs:V grown by liquid phase epitaxy

Balasubramanian, Sathya and Kumar, V (1992) Properties of GaAs:V grown by liquid phase epitaxy. In: Semiconductor Science and Technology, 74 (8). pp. 1117-1118.

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Abstract

GaAs grown by liquid phase epitaxy (LPE) and free from deep levels is well suited for studying vanadium-related levels in bulk GaAs. LPE growth of GaAs:V was carried out and it is found from deep-level transient spectroscopy (DLTS) that vanadium gives rise to an electron trap at 0.19±0.01 eV below the conduction band edge with a capture cross section of $4X10^{-16} cm^2$. This could be a level different from the electron trap at 0.14 eV reported for LEC-grown GaAs:V due to the formation of different complexes under different growth conditions.

Item Type:	Journal Article
Publication:	Semiconductor Science and Technology
Publisher:	IOP publishing
Additional Information:	Copyright of this article belongs to IOP Publishing
Keywords:	deep level transient spectroscopy;electron traps;gallium arsenide;III-V semiconductors;liquid phase epitaxial growth;vanadium
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	11 Jan 2008
Last Modified:	19 Sep 2010 04:38
URI:	http://eprints.iisc.ac.in/id/eprint/11140

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