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Direct evidence for negative-U nature of DX centre in $Al_xGa_{1-x}As$

Ghosh, S and Kumar, V (1992) Direct evidence for negative-U nature of DX centre in $Al_xGa_{1-x}As$. In: Proceedings of the Conference on the Physics and Technology of Semiconductor Devices and Integrated Circuits (SPIE Vol.1523), 5-7 Feb. 1992, Madras, India, pp. 82-84.

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Photo-Deep Level Transient Spectroscopy detection of a new level with thermal activation energy 0.22 eV for DX centers in silicon doped $Al_xGa_{1-x}As$ (x=0.26) is reported. The observation of this level directly proves the negative-U properties of DX centers and the existence of the metastable state $DX^o$ which is also confirmed by a transient photoconductivity experiment.

Item Type: Conference Paper
Publisher: Tata McGraw-Hill
Additional Information: Copyright of this article belongs to Tata McGraw-Hill.
Keywords: aluminium compounds;deep level transient spectroscopy; electron traps;gallium arsenide;III-V semiconductors; photoconductivity
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 10 Jan 2008
Last Modified: 12 Jan 2012 07:02
URI: http://eprints.iisc.ac.in/id/eprint/11132

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