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Evidence for metastable state of DX center in $Al_xGa_{1-x}As$

Ghosh, S and Kumar, V (1992) Evidence for metastable state of DX center in $Al_xGa_{1-x}As$. In: Defect Engineering in Semiconductor Growth, Processing and Device Technology Symposium, 26 April-1 May 1992, San Francisco, CA, USA, pp. 579-584.

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Photo-deep level transient spectroscopy with 1.38 eV light reveals a new level with thermal activation energy 0.2 eV of DX centers in silicon doped $Al_xGa_{1-x}As$ (x=0.26) for the first time. The observation of this level directly proves the negative-U properties of DX centers and the existence of thermodynamically metastable state DX.

Item Type: Conference Paper
Publisher: Materials Research Society
Additional Information: Copyright of this article belongs to Materials Research Society.
Keywords: aluminium compounds;deep level transient spectroscopy;deep levels;gallium arsenide;III-V semiconductors;silicon
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 10 Jan 2008
Last Modified: 12 Jan 2012 07:00
URI: http://eprints.iisc.ac.in/id/eprint/11130

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