Prasad, KVR and Satyalakshmi, KM and Varma, KBR and Mallya, RM and Hegde, MS (1994) Structure and ferroelectric properties of $Bi_2VO_{5.5}$ thin films by laser deposition. In: 8th IUPAP International Meeting on Ferroelectricity: IMF-8, 8-13 Aug. 1993, Gaithersburg, MD, USA, pp. 61-66.
Full text not available from this repository. (Request a copy)Abstract
c-axis oriented thin films of $Bi_2VO_{5.5}$ (BVO), an n=1 member of the Aurivillius family, have been grown on $SrTiO_3$(STO) by pulsed laser deposition. Metallic $LaNiO_3$(LNO) films have been grown on STO and $SiO_2/Si(100)$ substrates; c-axis oriented BVO have been deposited on the lattice matched LNO/STO and $LNO/SiO_2/Si$ where the LNO film acts as an electrode. Trilayer structures, Au/BVO/LNO/STO, LNO/BVO/LNO/STO and Au/BVO/LNO/$SiO_2$/Si have been fabricated and ferroelectric properties of BVO have been confirmed from hysteresis loop measurements. The remnant polarization and coercive field are about $4×10^{-8} C/cm2$ and 25 kV/cm respectively. The dielectric constant of the film was comparable to that of bulk BVO
| Item Type: | Conference Paper |
|---|---|
| Publisher: | Taylor and Francis Group |
| Additional Information: | Copyright of this article belongs to Taylor and Francis Group. |
| Keywords: | bismuth compounds;crystal structure;dielectric hysteresis; dielectric polarisation;ferroelectric materials; ferroelectric thin films;permittivity;pulsed laser deposition |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
| Date Deposited: | 19 Nov 2007 |
| Last Modified: | 11 Jan 2012 09:58 |
| URI: | http://eprints.iisc.ac.in/id/eprint/11046 |
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