Ramesh, K and Asokan, S and Sangunni, KS and Gopal, ESR (1996) Compositional dependence of high pressure resistivity behaviour of Cu-Ge-Te glasses. In: Physics and Chemistry of Glasses, 37 (5). 217- 220.
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Electrical resistivity measurements under pressures at ambient and low temperatures have been carried out on bulk, melt quenched $Cu_xGe_{15}Te_{85-x}$ glasses (2<x<10) in an opposed anvil set up. The resistivities of these samples are found to decrease continuously with pressure, changing by about six orders of magnitude around 4 GPa pressure The variation of conductivity activation energy with pressure also confirms the continuous metallisation of Cu-Ge-Te samples. The composition dependence of properties such as resistivity at ambient conditions, the pressure derivative of resistance (dp/dp), activation energy for electrical conduction at different pressures, etc., is found to exhibit anomalies at the composition 5 at% Cu. These results are explained on the basis of the rigidity percolation in chalcogenide network glasses.
| Item Type: | Journal Article |
|---|---|
| Publication: | Physics and Chemistry of Glasses |
| Publisher: | Society of Glass Technolology |
| Additional Information: | Copyright of this article belongs to Society of Glass Technology. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 01 Jul 2008 |
| Last Modified: | 11 Jan 2012 06:23 |
| URI: | http://eprints.iisc.ac.in/id/eprint/10931 |
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