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Hydrogen passivation of shallow dopants in InP studied by photoluminescence spectroscopy

Balasubramanian, S and Kumar, Vikram (1995) Hydrogen passivation of shallow dopants in InP studied by photoluminescence spectroscopy. In: Symposium Defect and Impurity Engineered Semiconductors and Devices, 17-21 April 1995, San Francisco, CA, USA, pp. 453-457.

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The effect of hydrogenation on the photoluminescence (PL) of InP:Mg, InP:Zn and undoped n-InP is presented. An increase in the near band edge PL intensity due to passivation of non-radiative centers was observed in all the samples. A donor-acceptor pair transition was observed before hydrogenation in the InP:Mg sample and after hydrogenation in the InP:Zn sample due to the acceptor deactivation. In n-InP the enhancement of donor bound exciton after hydrogenation points to the absence of donor passivation

Item Type: Conference Paper
Publisher: Materials Research Society
Additional Information: Copyright of this article belongs to Materials Research Society.
Keywords: excitons;hydrogen;III-V semiconductors;impurity states;indium compounds;magnesium;passivation;photoluminescence;zinc
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 17 Sep 2007
Last Modified: 11 Jan 2012 05:07
URI: http://eprints.iisc.ac.in/id/eprint/10885

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