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Hydrogen passivation of shallow dopants in indium doped bulk CdTe

Gurumurthy, S and Sreedhar, AK and Bhat, HL and Sundersheshu, B and Bagai, RK and Kumar, V (1995) Hydrogen passivation of shallow dopants in indium doped bulk CdTe. In: Symposium Defect and Impurity Engineered Semiconductors and Devices, 17-21 April 1995, San Francisco, CA, USA, pp. 423-428.

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Official URL: http://www.researchgate.net/publication/28602037_H...


Hydrogen passivation effects in In doped n-CdTe upon exposure to rf hydrogen plasma have been studied by electrical and photoluminescence measurements. Shallow dopant passivation of approximately an order of magnitude at 150°C and 50% at 170°C is observed. No visual damage is seen. Reverse bias annealing effects are also studied. Results are discussed

Item Type: Conference Paper
Publisher: Materials Research Society
Additional Information: Copyright of this article belongs to Materials Research Society.
Keywords: doped n-CdTe;Hydrogen passivation effects;photoluminescence measurements;rf hydrogen plasma;visual damage
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 17 Sep 2007
Last Modified: 10 Jan 2012 10:07
URI: http://eprints.iisc.ac.in/id/eprint/10883

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