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Effect of Nature of the Precursor on Crystallinity and Microstructure of MOCVD-Grown $ZrO_2$ Thin Films

Dharmaprakash, MS and Shivashankar, SA (2003) Effect of Nature of the Precursor on Crystallinity and Microstructure of MOCVD-Grown $ZrO_2$ Thin Films. In: Novel Materials and Processes for Advanced CMOS. Symposium, 2-4 Dec. 2002, Boston, MA, USA, pp. 191-6.

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In the present work, we report the deposition of zirconia thin films on Si(100) at various substrate temperatures by low-pressure metalorganic chemical vapor deposition (MOCVD). Three different zirconium complexes, viz., tetrakis(2,4-pentadionato)zirconium(IV), $[Zr(pd)_4]$, tetrakis(2,2,6,6-tetramethyl-3,5-heptadionato)zirconium(IV), $[Zr(thd)_4]$, and tetrakis(t-butyl-3-oxo-butanoato)zirconium(IV), $[Zr(tbob)_4]$ are used as precursors. The relationship between the molecular structures of the precursors and their thermal properties, as examined by TG/DTA is presented. The films deposited using these precursors have distinctly different morphology, though all of them are of the cubic phase. The films grown from $Zr(thd)_4$ are well crystallized, showing faceted growth at 575°C, whereas the films grown from $Zr(pd)_4$ and $Zr(tbob)_4$ are not well crystallized, and display cracks. These differences in the observed microstructure may be attributed to the different chemical decomposition pathways of the precursors during the film growth, which influence the nucleation and the growth processes. This is also evidenced by the different kinetics of growth from these three precursors under otherwise identical CVD conditions. The details of thin film deposition, and film microstructure analysis by XRD and SEM is presented. The dielectric behavior of the films deposited from different precursors, as studied by C-V measurements, are compared

Item Type: Conference Paper
Publisher: Material Research Society
Additional Information: Copyright of this article belongs to Material Research Society.
Keywords: crystal microstructure;crystallisation;dielectric thin films;differential thermal analysis;MOCVD coatings;nucleation;scanning electron microscopy;surface cracks;surface morphology;X ray diffraction;zirconium compounds
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 21 Aug 2007
Last Modified: 27 Aug 2008 12:46
URI: http://eprints.iisc.ac.in/id/eprint/10638

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