Raman and photoluminescence studies on thermally annealed porous silicon

Roy, A and Jayaram, K and Sood, AK (1994) Raman and photoluminescence studies on thermally annealed porous silicon. In: Solid State Communications, 89 (3). pp. 229-233.

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Abstract

We report Raman and Photoluminescence (PL) studies of porous silicon (PS) as a function of isochronal thermal annealing from room temperature to $900^\circ C$. The PL peak position and intensity show nonmonotonic variation with increasing temperature. The PL intensity first increases upto $100^\circ C$, then decreases till $550^\circ C$. The red shifted asymmetric Raman line shape can be fitted by phonon confinement model along with the disordered silicon component. Our results clearly indicate that the origin of visible PL can be better explained by a new hybrid model which incorporates both nanostructures for quantum confinement and silicon complexes (such as SiHx and siloxene) and defects at $Si/SiO_2$ interfaces as luminescent centres.

Item Type:	Journal Article
Publication:	Solid State Communications
Publisher:	Elsevier Science Ltd
Additional Information:	Copyright for this article belongs to Elsevier Science Ltd.
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit Division of Physical & Mathematical Sciences > Physics
Date Deposited:	26 Jul 2004
Last Modified:	19 Sep 2010 04:14
URI:	http://eprints.iisc.ac.in/id/eprint/1063

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