Bhat, Asha N and Sangunni, KS and Rao, KSRK (2001) PL due to discrete gap levels in some chalcogenide glasses - a configurational coordinate diagram illustration. In: Luminescence and Luminescent Materials. Symposium, 17-19 April 2001, San Francisco, CA, USA, G3.4.1-G3.4.6.
Full text not available from this repository. (Request a copy)Abstract
Photoluminescence (PL) studies were carried out on a-Se and a few $Ge_{20}Se_{80-x}Bi_x$ and $Ge_{20}Se_{70-x}Bi_xTe_{10}$ bulk glassy semiconductors at 4.2 K with $Ar^+$ laser as excitation source. While a-Se and samples with lesser at% of Bi show fine structured PL with a large Stokes shift, samples with higher at% of Bi did not show any detectable PL. The investigations show at least three radiative recombination transitions. Features extracted by deconvoluting the experimental spectra show that the discrete gap levels associated with the inherent coordination defects are involved in the PL transitions. Absence of PL in samples with higher Bi at% are explained on the basis of nonradiative transition mechanisms. Overall PL mechanism involving gap levels in chalcogenide glasses is illustrated with the help of a configurational coordinate diagram
| Item Type: | Conference Paper |
|---|---|
| Publisher: | Materials Research Society |
| Additional Information: | Copyright of this article belongs to Materials Research Society |
| Keywords: | argon;bismuth compounds;chalcogenide glasses;electron hole recombination;energy gap;fine structure;gas lasers;germanium compounds;photoluminescence;selenium;selenium compounds;spectral line shift;tellurium compounds |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 17 Aug 2007 |
| Last Modified: | 19 Aug 2011 11:42 |
| URI: | http://eprints.iisc.ac.in/id/eprint/10520 |
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