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Conduction mechanism in antiferrolectric $PbZrO_3$ thin films. Analysis of charge carrier trapping phenomenon

Bharadwaja, SSN and Krupanidhi, SB (2001) Conduction mechanism in antiferrolectric $PbZrO_3$ thin films. Analysis of charge carrier trapping phenomenon. In: Twelfth International Symposium on Integrated Ferroelectrics, 12-15 March 2000, Aachen, Germany, pp. 283-297.

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Antiferroelectric compositions, such as $PbZrO_3$, are attractive candidates in charge storage devices and actuator/transducer applications in MEMs technology. Thin films of $PbZrO_3$ were deposited on Pt coated Si substrates by a pulsed excimer ablation process. The process of field induced ferroelectric phase switching involves the domain wall reorientation in the polycrystalline thin films. The presence of grain boundaries and various defects in the polycrystalline thin films acts as the pinning sources for the various domain walls. These defects capture the charge carriers in the presence of external applied field and hinders further switching of the dipoles in the domains, thereby increasing the response times and threshold voltages for the devices operations. Understanding of the trapping phenomenon in these films is very essential. Using Lampert's theory of space charge limited conduction both shallow and deep trap energies were estimated approximately from charge transport analysis

Item Type: Conference Paper
Publication: Integrated Ferroelectrics
Publisher: Gordon & Breach
Additional Information: Copyright of this article belongs to Gordon & Breach
Keywords: antiferroelectric materials;electric domain walls;electron traps;ferroelectric switching;ferroelectric thin films;grain boundaries;hole traps;lead compounds;pulsed laser deposition;space charge limited conduction
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 16 Aug 2007
Last Modified: 27 Aug 2008 12:45
URI: http://eprints.iisc.ac.in/id/eprint/10498

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