Singh, MP and Raghavan, G and Tyagi, AK and Shivashankar, SA (2001) Ellipsometry as a sensitive technique to probe film -substrate interfaces: $Al_2O_3$ on Si(100). In: Structure-Property Relationships of Oxide Surfaces and Interfaces. Symposium, 27-29 Nov. 2000, Boston, MA, USA, AA3.33.1-AA3.33.6.
Full text not available from this repository. (Request a copy)Abstract
An attempt has been made to study the film-substrate interface by using a sensitive, non-conventional tool. Because of the prospective use of gate oxide in MOSFET devices, we have chosen to study alumina films grown on silicon. Film-substrate interface of alumina grown by MOCVD on Si(100) was studied systematically using spectroscopic ellipsometry in the range 1.5-5.0 eV, supported by cross sectional SEM, and SIMS. The $(ϵ_1,ϵ_2)$ versus energy data obtained for films grown at 600°C, 700°C, and 750°C were modeled to fit $a substrate \ interface \ film $"sandwich". The experimental results reveal (as may be expected) that the nature of the substrate -film interface depends strongly on the growth temperature. The simulated $(ϵ_1,ϵ_2)$ patterns are in excellent agreement with observed ellipsometric data. The MOCVD precursors results the presence of carbon in the films. Theoretical simulation was able to account for the ellipsometry data by invoking the presence of "free" carbon in the alumina films
| Item Type: | Conference Paper |
|---|---|
| Publisher: | Materials Research Society |
| Additional Information: | Copyright of this article belongs to Materials Research Society |
| Keywords: | alumina;dielectric thin films;elemental semiconductors;ellipsometry;interface roughness;MOCVD coatings;secondary ion mass spectra;semiconductor insulator boundaries;silicon;transmission electron microscopy |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
| Date Deposited: | 08 Aug 2007 |
| Last Modified: | 22 Sep 2008 09:58 |
| URI: | http://eprints.iisc.ac.in/id/eprint/10453 |
Actions (login required)
 |
View Item |
