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Universal conductance fluctuations and scale invariance near the metal-insulator transition

Ghosh, A and Raychaudhuri, AK (2001) Universal conductance fluctuations and scale invariance near the metal-insulator transition. In: of International APS/IEEE Conference on Noise in Physical Systems and 1/f Fluctuations, 22-25 Oct. 2001, Gainesville, FL, USA, pp. 107-110.

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We present results of measurements of 1/f noise $(10^-3< f <10 Hz)$ at low temperatures (1K <T < 100 K) in Czochralski grown single crystals of Si doped with P and B with doping concentration n close to the critical composition $n_c$ of metal-insulator transition (MIT). It was shown by us before by measuring noise in a magnetic field that universal conductance fluctuation (UCF) is at the origin of the observed noise. We find that the temperature dependence of the measured noise, which increases as T is decreased, has a stronger dependence on T as the as $n\rightarrow n_c$ from above. We explained this observation within the framework of UCF theory and scaling theory of localization near the MI transition. We show that the temperature dependence of saturated UCF is significantly affected due to weakening scale dependence of conductance as the MIT is approached

Item Type: Conference Paper
Publisher: World Scientific
Additional Information: Copyright of this article belongs to World Scientific
Keywords: 1 f noise;boron;current fluctuations;electric admittance;elemental semiconductors;metal insulator transition;phosphorus;silicon
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 08 Aug 2007
Last Modified: 27 Aug 2008 12:44
URI: http://eprints.iisc.ac.in/id/eprint/10449

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