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Dielectric Properties of Pulsed Excimer Laser Ablated $BaBi_2Nb_2O_9$ Thin Films

Laha, A and Krupanidhi, SB and Saha, S (2003) Dielectric Properties of Pulsed Excimer Laser Ablated $BaBi_2Nb_2O_9$ Thin Films. In: Ferroelectric Thin Films XI. Symposium(Mater. Res. Soc. Symposium Proceedings Vol.748), 2-5 Dec. 2002, Boston, MA, USA, pp. 435-440.

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The dielectric response of $BaBi_2Nb_2O_9(BBN)$ thin films has been studied as a function of frequency over a wide range of temperatures. Both dielectric constant and loss tangent of BBN thin films showed a 'power law' dependence with frequency, which was analyzed using the Jonscher's' universal dielectric response model. Theoretical fits were utilized to compare the experimental results and also to estimate the value of temperature dependence parameters such as n(T) and a(T) used in the Jonscher's model. The room temperature dielectric constant (ϵ') of the BBN thin films was 214 with a loss tangent (tanδ) of 0.04 at a frequency of 100 kHz. The films exhibited the second order dielectric phase transition from ferroelectric to paraelectric state at a temperature of 220°C. The nature of phase transition was confirmed from the temperature dependence of dielectric constant and spontaneous polarization, respectively. The calculated Currie constant for BBN thin films was $4X10^5°C$

Item Type: Conference Paper
Publisher: Material Research Society
Additional Information: Copyright of this article belongs to Material Research Society.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 11 Jul 2007
Last Modified: 27 Aug 2008 12:44
URI: http://eprints.iisc.ac.in/id/eprint/10425

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