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Excimer laser ablation processed ferroelectric and antiferroelectric thin films

Krupanidhi, SB and Saha,, S and Bhattacharyya, S and Bharadwaja, SSN (2000) Excimer laser ablation processed ferroelectric and antiferroelectric thin films. In: Twelfth International Symposium on Integrated Ferroelectrics, 12-15 March 2000, Aachen, Germany, pp. 1-12.

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The dielectric and electrical properties of excimer laser ablated processed paraelectric $(Ba_{0.5},Sr_{0.5})TiO_3$ ferroelectric Bi-layered $SrBi_2(Ta_{0.5}Nb_{0.5})_2O_9$ and antiferroelectric $(PbZrO_3)$ thin films have been investigated. The effect of processing parameters on the microstructure of the films and the functional properties has been presented in detail. Some of the recent studies of stress induced effects, dielectric, hysteresis and ac and dc electrical properties have been highlighted in conjunction with microstructures of the films

Item Type: Conference Paper
Publication: Integrated Ferroelectrics
Publisher: Gordon & Breach
Additional Information: Copyright of this article belongs to Gordon & Breach
Keywords: antiferroelectric materials;barium compounds;bismuth compounds;crystal microstructure;ferroelectric materials;ferroelectric thin films;laser ablation;lead compounds;strontium compounds
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 07 Aug 2007
Last Modified: 27 Aug 2008 12:44
URI: http://eprints.iisc.ac.in/id/eprint/10401

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