A novel in situ method for simultaneous growth of smart material single crystals and thin films

Ramamoorthy, K and Kumar, K and Koinkar, Pankaj and Ganesan, K and Shah, Amit P and Sankaranarayanan, K and Ramasamy, P (2007) A novel in situ method for simultaneous growth of smart material single crystals and thin films. In: Smart Materials and Structures, 16 (1). pp. 83-88.

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Abstract

Development of a novel in situ method for simultaneous growth of single crystals and thin films of a smart material spinel is achieved. Material to be grown as metal-incorporated single crystal and thin film was taken as a precursor and put into a bath containing acid as a reaction speed-up reagent (catalyst) as well as a solvent with a metal foil as cation scavenger. By this novel method, zinc aluminate crystals having hexagonal facets and thin films having single crystalline orientation were prepared from a single optimized bath. Properties of both crystals and thin films were studied using an x-ray diffractometer and EDAX. $ZnAl_2O_4$ is a well-known wide bandgap compound semiconductor ($E_g$ = 3.8 eV), ceramic, opto-mechanical and anti-thermal coating in aerospace vehicles. Thus a space gmr technique was found to be a new low cost and advantageous method for in situ and simultaneous growth of single crystals and thin films of a smart material.

Item Type:	Journal Article
Publication:	Smart Materials and Structures
Publisher:	Institute of Physics
Additional Information:	Copyright of this article belongs to Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	14 Mar 2007
Last Modified:	19 Sep 2010 04:36
URI:	http://eprints.iisc.ac.in/id/eprint/10245

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