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Madhavi, S and Venkataraman, V and Xie, YH (2000) High Room Temperature Hole Mobility In $Ge_{0.7}Si_{0.3}/Ge/Ge_{0.7}Si_{0.3}$ Modulation Doped Heterostructures In The Absence Of parallel Conduction. In: 58th DRC Device Research Conference, 2000. Conference Digest, 19-21 June, Denver,Colorado, pp. 29-30.
Madhavi, S and Venkataraman, V and Xie, YH (2001) High room-temperature hole mobility in Ge0.7Si0.3/Ge/Ge0.7Si0.3 modulation-doped heterostructures. In: Journal of Applied Physics, 89 (4). pp. 2497-2499.
Vijayaraghavan, MN and Venkataraman, V and Xie, YH (2000) Ultra-sensitive photoresponse and persistent photoconductivity in modulation doped Ge/SiGe and Si/SiGe heterostructures. In: Semiconductor Science and Technology, 15 (10). pp. 957-960.
Madhavi, S and Venkataraman, V and Sturm, JC and Xie, YH (2000) Low- and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells. In: Physical Review B, 61 (24). pp. 16807-16818.
