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Roy, AC and Kumar, N and Shreyas, BS and Gupta, A and Kumar, A and Venkataraman, V (2021) Optical soft artificial skin. In: Frontiers in Optics + Laser Science 2021, FiO+LS 2021 - Part of Frontiers in Optics, FiO 2021, 4-5 November 2021, New york, Virtual, Online.
Mondal, Sandip and Venkataraman, V (2017) Flash Memory TFT Based on Fully Solution Processed Oxide. In: 75th Annual Device Research Conference (DRC), JUN 25-28, 2017, Univ Notre Dame, South Bend, IN.
Mondal, Sandip and Kumar, Arvind and Rao, Koteswara K S R and Venkataraman, V (2017) Scaling Behavior of Fully Spin-coated TFT. In: 61st DAE-Solid State Physics Symposium, DEC 26-30, 2016, KIIT Univ, Bhubaneswar, INDIA.
Mondal, Sandip and Kumar, Arvind and Rao, Koteswara KSR and Venkataraman, V (2016) Highly Reliable Spin-coated Titanium Dioxide Dielectric. In: DAE Solid State Physics Symposium, DEC 21-25, 2015, Amity Univ, Noida, INDIA.
Mondal, Sandip and Venkataraman, V (2015) All Inorganic Spin-coated Nanoparticle Memory Device. In: 2015 73rd Annual Device Research Conference (DRC), JUN 21-24, 2015, Ohio State Univ, Columbus, OH, pp. 129-130.
Choudhury, Aditya Roy N and Venkataraman, V (2015) A Novel Technique To Measure Interface Trap Density In A GaAs MOS Capacitor Using Time-Varying Magnetic Fields. In: DAE Solid State Physics Symposium, DEC 21-25, 2015, Amity Univ, Noida, INDIA.
Mohan, S and Bhat, Navakanta and Pratap, Rudra and Jamadagni, HS and Shivashankar, SA and Ananthasuresh, GK and Venkataraman, V and Vinoy, KJ and Vasi, JM and Rao, Ramgopal V and Kottantharayil, Anil and Contractor, AQ (2010) Centers of Excellence in Nanoelectronics in India. In: 18th Biennial University/Government/Industry Micro-Nano Symposium, JUN 28-JUL 01, 2010, Purdue Univ, West Lafayette.
Mishra, Vijay and Ananthasuresh, GK and Bhat, Navakanta and Jamadagni, HS and Mohan, S and Murthy, TUMS and Pratap, Rudra and Shivashankar, SA and Venkataraman, V and Vinoy, KJ and Nageswari, K and Contractor, AQ and Kottantharayil, Anil and Pinto, R and Rao, Ramgopal V and Vasi, JM (2010) Indian Nanoelectronics Users Program An Outreach Vehicle to Expedite Nanoelectronics Research in India. In: 18th Biennial University/Government/Industry Micro-Nano Symposium, JUN 28-JUL 01, 2010, Purdue Univ, West Lafayette.
Murthy, OVSN and Venkataraman, V (2008) Closed cycle refrigerator based pulsed magnet. In: 18th High Magnetic Fields in Semiconductors.
Joshua, Arjun and Venkataraman, V (2008) Enhancement of sensitivity of detection of Kerr rotation by time averaging. In: 5th Intl. Conf. on Physics and Applications of Spin related Phenomena in Semi-conductors.
Murthy, OVSN and Venkataraman, V (2008) Hole mobility in HgCdTe. In: 29th Intl. Conf. on the Physics of Semiconductors.
Murthy, OVSN and Venkataraman, V (2008) Hot carrier transport in HgCdTe epilayers. In: 29th Intl. Conf. on the Physics of Semiconductors.
Joshua, Arjun and Venkataraman, V (2008) Quasiequilibrium nonlinearities in Faraday and Kerr rotation from spin-polarized carriers in GaAs. In: 29th Intl. Conf. on the Physics of Semi-conductors.
Joshua, Arjun and Venkataraman, V (2007) Simplified theory of optical nonlinearities in spin-polarized bulk GaAs. In: 14th International Workshop on the Physics of Semiconductor Devices, DEC 16-20, 2007, Mumbai.
Arju, Nihal and Venkataraman, V (2007) Investigation on Growth of Bismuth Films by Thermal Vapour Deposition. In: 52nd DAE Solid State Physics Symposium, 27-31 December 2007, Mysore.
Murthy, OVSN and Kulkarni, GA and Venkataraman, V and Sitharaman, S (2007) Magnetotransport studies in hydrogenated and annealed Mercury Cadmium Telluride thin films. In: 14th International Workshop on the Physics of Semiconductor Devices, DEC 17-20, 2007, Mumbai.
Joshua, Arjun and Venkataraman, V (2007) Simplified theory of optical nonlinearities in spin-polarized bulk GaAs. In: 14th International Workshop on the Physics of Semiconductor Devices, DEC 17-20, 2007, Mumbai.
Joshua, Arjun and Venkataraman, V (2006) Effect of Photo-excited carriers on inter-band absorption in silicon. In: Intl. Conf. on Electronic & Photonic Materials, Devices & Systems, January 2006, Kolkata.
Mondal, Sudip and Venkataraman, V and Pal, Debjani (2006) Optimization of PCR using fast in-situ fluorescence in microchip. In: 2006 NSTI Nanotechnology Conf. and Trade Show, Boston, USA, May 2006.
Bansal, Bhavtosh and Venkataraman, V and Bhat, HL and Dixit, VK (2004) Transport, optical and magnetotransport properties of hetero-epitaxial InAsxSb1−x/GaAs(x0.06) and bulk View the MathML source crystals: experiment and theoretical analysis. In: Proceedings of the 11th International Conference on Narrow Gap Semiconductors, JUN 16-20, 2003, Buffalo, New York.
Chakraborty, Arpan and Mane, Anil U and Shivashankar, SA and Venkataraman, V (2003) Effect of Post-Metallization Hydrogen Annealing on C-V Characteristic of Zirconia Grown Using Atomic Layer Deposition. In: Novel Materials and Processes for Advanced CMOS. Symposium, 2-4 Dec. 2002, Boston, MA, USA, pp. 143-7.
Madhavi, S and Venkataraman, V and Xie, YH (2000) High Room Temperature Hole Mobility In $Ge_{0.7}Si_{0.3}/Ge/Ge_{0.7}Si_{0.3}$ Modulation Doped Heterostructures In The Absence Of parallel Conduction. In: 58th DRC Device Research Conference, 2000. Conference Digest, 19-21 June, Denver,Colorado, pp. 29-30.
Madhavi, S and Venkataraman, V (2000) Mobility limiting mechanisms in modulation doped Si/SiGe and Ge/SiGe heterostructures. In: Tenth International Workshop on the Physics of Semiconductor Devices, 14-18 Dec. 1999, New Delhi, India, pp. 407-410.
Bhavtosh, Bansal and Venkataraman, V (2000) Study of magnetotransport in Si/SiGe heterostructures using a low cost 7 tesla pulsed magnet. In: Tenth International Workshop on the Physics of Semiconductor Devices, 14-18 Dec. 1999, New Delhi, India, pp. 327-332.
Raghavan, MNV and Venkataraman, V (1996) Effect of hydrogenation on low temperature mobility and carrier concentration in Si/SiGe heterostructures. In: 8th International Workshop on Physics of Semiconductor Devices, DEC 11-16, 1995, NEW DELHI, INDIA.
Madhavi, S and Venkataraman, V and Liu, CW and Sturm, JC (1996) High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques. In: 54th Annual Device Research Conference, JUN 24-26, 1996, SANTA BARBARA.
Sukhadia, SS and Tyagi, A and Venkataraman, V and Mukherjee, P and Prasad, P and Gevaert, O and Nagaraj, SH (2022) ImaGene: A web-based software platform for tumor radiogenomic evaluation and reporting. In: Bioinformatics Advances, 2 (1).
Roy, AC and Kumar, N and Subramanya, SB and Gupta, A and Kumar, A and Bid, A and Venkataraman, V (2022) Large-Area 3D Printable Soft Electronic Skin for Biomedical Applications. In: ACS Biomaterials Science and Engineering .
Sur, S and Ghosh, A and Venkataraman, V (2021) Temporal coherence of surface plasmons in silver waveguides. In: Journal of the Optical Society of America B: Optical Physics, 38 (5). pp. 1457-1461.
Chandra Roy, A and Bangalore Subramanya, S and Manohar Rudresh, S and Venkataraman, V (2020) On chip optofluidic low-pressure monitoring device. In: Journal of Biophotonics . (In Press)
Chandan, C and Islam, S and Venkataraman, V and Ghosh, A and Angadi, B (2020) Observation of linear magneto-resistance with small cross-over field at room temperature in bismuth. In: Journal of Physics D: Applied Physics, 53 (42).
Sharma, S and Kumar, V and Rawat, P and Ghosh, J and Venkataraman, V (2020) Nanowaveguide Designs in 220-nm SOI for Ultra-Broadband FWM at Telecom Wavelengths. In: IEEE Journal of Quantum Electronics, 56 (5).
Mondal, S and Paul, T and Ghosh, A and Venkataraman, V (2020) Gate-Controllable Electronic Trap Detection in Dielectrics. In: IEEE Electron Device Letters, 41 (5). pp. 717-720.
Mondal, Sandip and Venkataraman, V (2019) Low temperature below 200 degrees C solution processed tunable flash memory device without tunneling and blocking layer. In: NATURE COMMUNICATIONS, 10 .
Mondal, Sandip and Venkataraman, V (2019) All inorganic solution processed three terminal charge trapping memory device. In: APPLIED PHYSICS LETTERS, 114 (17).
Sur, Soutik and Venkataraman, V (2018) Observation of Electro-Optic Pockels Effect at the Amorphous TiO2 and Metal Interface. In: PHYSICAL REVIEW APPLIED, 10 (1).
Mondal, Sandip and Venkataraman, V (2017) Tunable electron affinity with electronic band alignment of solution processed dielectric. In: APPLIED PHYSICS LETTERS, 111 (4).
Khare, SM and Venkataraman, V (2016) Air microjet system for non-contact force application and the actuation of micro-structures. In: JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 26 (1).
Mondal, Sandip and Venkataraman, V (2016) All Inorganic Spin-Coated Nanoparticle-Based Capacitive Memory Devices. In: IEEE ELECTRON DEVICE LETTERS, 37 (4). pp. 396-399.
Choudhury, Aditya Roy N and Venkataraman, V (2016) Measuring the magnetic-field-dependent chemical potential of a low-density three-dimensional electron gas in n-GaAs and extracting its magnetic susceptibility. In: PHYSICAL REVIEW B, 93 (4).
Khare, Siddharth M and Awasthi, Anjali and Venkataraman, V and Koushika, Sandhya P (2015) Colored polydimethylsiloxane micropillar arrays for high throughput measurements of forces applied by genetic model organisms. In: BIOMICROFLUIDICS, 9 (1).
Majhi, Amit Kumar and Kanchi, Subbarao and Venkataraman, V and Ayappa, KG and Maiti, Prabal K (2015) Estimation of activation energy for electroporation and pore growth rate in liquid crystalline and gel phases of lipid bilayers using molecular dynamics simulations. In: SOFT MATTER, 11 (44). pp. 8632-8640.
Majhi, Amit Kumar and Thrivikraman, Greeshma and Basu, Bikramjit and Venkataraman, V (2015) Optically transparent polymer devices for in situ assessment of cell electroporation. In: EUROPEAN BIOPHYSICS JOURNAL WITH BIOPHYSICS LETTERS, 44 (1-2). pp. 57-67.
Bansal, Bhavtosh and Ghosh, Rituparna and Venkataraman, V (2013) Scattering of carriers by charged dislocations in semiconductors. In: Journal of Applied Physics, 113 (16). 163705_1-163705_6.
Srivastav, V and Pal, R and Saini, N and Saxena, RS and Bhan, RK and Sareen, L and Singh, KP and Sharma, RK and Venkataraman, V (2013) Effect of Temperature Cycling on Conduction Mechanisms in CdTe Thin Films. In: JOURNAL OF ELECTRONIC MATERIALS, 42 (3). pp. 389-397.
Srivastav, Vanya and Sharma, RK and Bhan, RK and Dhar, V and Venkataraman, V (2013) Exploring novel methods to achieve sensitivity limits for high operating temperature infrared detectors. In: INFRARED PHYSICS & TECHNOLOGY, 61 . pp. 290-298.
Srivastav, Vanya and Pal, R and Sareen, L and Venkataraman, V (2012) Analysis of current voltage characteristics of MWIR homojunction photodiodes for uncooled operation. In: INFRARED PHYSICS & TECHNOLOGY, 55 (4). pp. 270-274.
Choudhury, Aditya Roy N and Venkataraman, V (2012) A 10 tesla table-top controlled waveform magnet. In: Review of Scientific Instruments, 83 (4).
Srivastav, Vanya and Pal, R and Venkataraman, V (2012) Modeling of room temperature current-voltage measurements on homo-junction HgCdTe diodes exhibiting nonequilibrium effects. In: Journal of Applied Physics, 111 (3).
Guite, Chinkhanlun and Venkataraman, V (2012) Temperature dependence of spin lifetime of conduction electrons in bulk germanium. In: APPLIED PHYSICS LETTERS, 101 (25).
Guite, Chinkhanlun and Venkataraman, V (2011) Measurement of Electron Spin Lifetime and Optical Orientation Efficiency in Germanium Using Electrical Detection of Radio Frequency Modulated Spin Polarization. In: Physical Review Letters, 107 (16).
Guite, Chinkhanlun and Venkataraman, V (2011) High sensitivity detection of radio-frequency modulated magnetic moment in semiconductors. In: Review of Scientific Instruments, 82 (10).
Mondal, Sudip and Ahlawat, Shikha and Rau, Kaustubh and Venkataraman, V and Koushika, Sandhya P (2011) Imaging in vivo Neuronal Transport in Genetic Model Organisms Using Microfluidic Devices. In: Traffic, 12 (4). pp. 372-385.
Ganesan, K and Pendyala, NB and Rao, Koteswara KSR and Venkataraman, V and Bhat, HL (2010) Optical absorption and photoluminescence studies on heavily doped (Ga,Mn)Sb crystals. In: Semiconductor Science and Technology, 25 (10).
Srivastav, Vanya and Pal, R and Venkataraman, V (2010) Performance study of high operating temperature HgCdTe mid wave infrared detector through numerical modeling. In: Journal of Applied Physics, 108 (7).
Murthy, Oruganty VSN and Venkataraman, V and Sharma, RK and Vurgaftman, I and Meyer, JR (2009) Multicarrier conduction and Boltzmann transport analysis of heavy hole mobility in HgCdTe near room temperature. In: Journal of applied physics, 106 (11).
Joshua, Arjun and Venkataraman, V (2009) Simplified theory of optical nonlinearities in spin-polarized semiconductors. In: Journal Of Physics-Condensed Matter, 21 (44).
Murthya, OVSN and Venkataraman, V (2009) A Closed-Cycle Refrigerator Based Pulsed Management System. In: International Journal of Modern Physics B, 23 (12-13). pp. 3024-3028.
Joshua, Arjun and Venkataraman, V (2009) Enhanced sensitivity in detection of Kerr rotation by double modulation and time averaging based on Allan variance. In: Review Of Scientific Instruments, 80 (2).
Murthy, OVSN and Venkataraman, V (2009) Multicarrier analysis of magnetotransport data at low and high electric fields. In: Physica Status Solidi C - Current Topics in SOlid State Physics, 6 (6). pp. 1505-1508.
Joshua, Arjun and Venkataraman, V (2008) Quasiequilibrium optical nonlinearities from spin-polarized carriers in GaAs. In: Physical Review B: Condensed Matter and Materials Physics, 77 (8).
Mondal, Sudip and Venkataraman, V (2007) Novel fluorescence detection technique for non-contact temperature sensing in microchip PCR. In: Journal of Biochemical and Biophysical Methods, 70 (5). pp. 773-777.
Venkataraman, V and Kumar, N and Natarajan, Vasant (2007) Venkataraman, Natarajan, and Kumar Reply. In: Physical Review Letters, 98 (18). pp. 189803-1.
Bansal, Bhavtosh and Dixit, VK and Venkataraman, V and Bhat, HL (2007) Alloying induced degradation of the absorption edge of $InAs_xSb_{1-x}$. In: Applied Physics Letters, 90 (10). pp. 101905-3.
Mondal, Sudip and Paul, Debjani and Venkataraman, V (2007) Dynamic optimization of on-chip polymerase chain reaction by monitoring intracycle fluorescence using fast synchronous detection. In: Applied Physics Letters, 90 (1). 013902-1-3013902-3.
Bansal, Bhavtosh and Venkataraman, V and Dixit, VK and Bhat, HL (2007) Alloying induced degradation of the absorption edge of InAsxSb1-x. In: Applied Physics Letters, 90 (10). p. 101905.
Murthya, OVSN and Venkataraman, V (2007) Construction and calibration of a 12 T pulsed magnet integrated with a 4 K closed-cycle refrigerator. In: Review of Scientific Instruments, 78 (11). 113905-1-113905-5.
Mondal, Sudip and Venkataraman, V (2005) In situ monitoring of polymerase extension rate and adaptive feedback control of PCR by using fluorescence measurements. In: Journal of Biochemical and Biophysical Methods, 65 (2&3). pp. 97-105.
Joykutty, Joji and Mathur, Vaibhav and Venkataraman, V and Natarajan, Vasant (2005) Direct Measurement of the Oscillation Frequency in an Optical-Tweezers Trap by Parametric Excitation. In: Physical Review Letters, 95 (19). 193902-1-193902-4.
Joshua, Arjun and Venkataraman, V (2005) Effect of well width on the electro-optical properties of a quantum well. In: Semiconductor Science and Technology, 20 (6). pp. 490-495.
Nagapriya, KS and Raychaudhuri, AK and Bansal, Bhavtosh and Venkataraman, V and Parashar, Sachin and Rao, CNR (2005) Collapse of the charge-ordering state at high magnetic fields in the rare-earth manganite $Pr_{0.63}Ca_{0.37}MnO_3$. In: Physical Review B: Condensed Matter and Materials Physics, 71 (2). 024426/1-024426/6.
Pal, Debjani and Venkataraman, V and Mohan, Naga K and Chandra, Sharat H and Natarajan, Vasant (2004) A power-efficient thermocycler based on induction heating for DNA amplification by polymerase chain reaction. In: Review of Scientific Instruments, 75 (9). pp. 2880-2883.
Bansal, Bhavtosh and Dixit, VK and Venkataraman, V and Bhat, HL (2004) Transport, optical and magnetotransport properties of hetero-epitaxial In$As_xSb_{1-x}/GaAs(x\leq0.06)$ and bulk In$As_xSb_{1-x} (x\leq0.05)$ crystals: experiment and theoretical analysis. In: Physica E: Low-dimensional Systems and Nanostructures, 20 (3-4). pp. 272-277.
Bansal, Bhavtosh and Venkataraman, V and Bhat, HL and Dixit, VK (2003) Temperature dependence of the energy gap and free carrier absorption in bulk InAs0.05Sb0.95 single crystals. In: Applied Physics Letters, 82 (26). pp. 4720-4722.
Bansal, Bhavtosh and Dixit, VK and Venkataraman, V and Bhat, HL (2003) Temperature dependence of the energy gap and free carrier absorption in bulk $InAs_0_._0_5Sb_0_._9_5$ single crystals. In: Applied Physics Letters, 82 (26). pp. 4720-4722.
Sardar, K and Raju, AR and Bansal, B and Venkataraman, V and Rao, CNR (2003) Magnetic, optical and transport properties of GaMnN films. In: Solid State Communications, 125 (1). pp. 55-57.
Pal, Debjani and Venkataraman, V (2002) A portable battery-operated chip thermocycler based on induction heating. In: Sensors and Actuators A: Physical, 102 (1-2). pp. 151-156.
Dixit, VK and Bansal, Bhavtosh and Venkataraman, V and Bhat, HL and Subbanna, GN (2002) Structural, optical, and electrical properties of bulk single crystals of InAsxSb(1-x) grown by rotatory Bridgman method. In: Applied Physics Letters, 81 (9). pp. 1630-1632.
Dixit, VK and Bansal, Bhavtosh and Venkataraman, V and Bhat, HL and Subbanna, GN (2002) Structural, optical, and electrical properties of bulk single crystals of InAsx Sb(1–x) grown by rotatory Bridgman method. In: Applied Physics Letters, 81 (9). pp. 1630-1632.
Dixit, VK and Bansal, Bhavtosh and Venkataraman, V and Bhat, HL and Subbanna, GN and Chandrasekharan, KS and Arora, BM (2002) High-mobility InSb epitaxial films grown on a GaAs (001) substrate using liquid-phase epitaxy. In: Applied Physics Letters, 80 (12). pp. 2102-2104.
Chakraborty, Arpan and Mane, Anil U and Shivashankar, SA and Venkataraman, V (2002) Effect of Post-Metallization Hydrogen Annealing on C-V Characteristic of Zirconia Grown Using Atomic Layer Deposition. In: MRS Proceedings, 745 (N5.2). .
Mukerjee, Subroto and Venkataraman, V (2001) Ellipsometric investigation of strain reduction in $Si_ {1-x-y}Ge_xC_y$ layers compared to $Si_ {1-x}Ge_x$ layers on silicon. In: Solid-State Electronics, 45 (11). pp. 1875-1877.
Madhavi, S and Venkataraman, V and Xie, YH (2001) High room-temperature hole mobility in Ge0.7Si0.3/Ge/Ge0.7Si0.3 modulation-doped heterostructures. In: Journal of Applied Physics, 89 (4). pp. 2497-2499.
Madhavi, S and Venkataraman, V (2001) High room-temperature hole mobility in $Ge_{0.7 Si_0.3}/Ge/Ge_{0.7}Si_{0.3}$ modulation-doped heterostructures. In: Journal of Applied Physics, 89 (4). pp. 2497-2499.
Mukerjee, Subroto and Venkataraman, V (2000) Characterization of strain in Si1-xGex films using multiple angle of incidence ellipsometry. In: Applied Physics Letters, 77 (22). pp. 3529-3531.
Mukerjee, Subroto and Venkataraman, V (2000) Characterization of strain in $Si_1_-_xGe_x$ films using multiple angle of incidence ellipsometry. In: Applied Physics Letters, 77 (22). pp. 3529-3531.
Vijayaraghavan, MN and Venkataraman, V and Xie, YH (2000) Ultra-sensitive photoresponse and persistent photoconductivity in modulation doped Ge/SiGe and Si/SiGe heterostructures. In: Semiconductor Science and Technology, 15 (10). pp. 957-960.
Madhavi, S and Venkataraman, V (2000) Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe heterostructures. In: Thin Solid Films, 369 (1-2). pp. 333-337.
Madhavi, S and Venkataraman, V and Sturm, JC and Xie, YH (2000) Low- and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells. In: Physical Review B, 61 (24). pp. 16807-16818.
Raghavan, MNV and Venkataraman, V (1998) Enhanced room temperature mobilities and reduced parallel conduction in hydrogen passivated Si/SiGe heterostructures. In: Semiconductor Science and Technology, 13 (11). pp. 1317-1321.
Chang, CL and Shukla, SP and Pan, W and Venkataraman, V and Sturm, JC and Shayegan, M (1998) Effective mass measurement in two-dimensional hole gas in strained $Si_{1-x-y}Ge_xC_y/ Si$(100) modulation doped heterostructures. In: Thin Solid Films, 321 (1-2). pp. 51-54.
Majumdar, Amlan and Balasubramanian, Sathya and Venkataraman, V and Balasubramanian, N (1997) Reactivation kinetics of boron acceptors in hydrogenated silicon during zero bias anneal. In: Journal of Applied Physics, 82 (1). 192-195 .
Liu, CW and Venkataraman, V (1997) Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition. In: Materials Chemistry and Physics, 49 (1). pp. 29-32.
Balasubramanian, S and Venkataraman, V (1996) Valley Splitting in $Si/Si_{1-x}Ge_x$ Heterostructures. In: Solid State Communications, 100 (7). pp. 525-528.
Balasubramanian, S and Venkataraman, V (1996) Valley splitting in Si/Si1-xGex heterostructures. In: Solid State Communications, 100 (07). pp. 525-528.
Mondal, Sandip and Venkataraman, V (2016) Fully Spin-coated Memory TFT. In:
Bansal, Bhavtosh and Venkataraman, V (2005) Magnetic field induced band depopulation in intrinsic InSb: A revisit. [Preprint]
