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Gautam, SK and Variar, HB and Luo, J and Shi, N and Marreiro, D and Mallikarjunaswamy, S and Shrivastava, M (2023) 3D Approaches to Engineer Holding Voltage of SCR. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Kumar, J and Kuruva, H and Variar, HB and Patbhaje, U and Shrivastava, M (2023) Atomic-level Insight and Quantum Chemistry of Ambient Reliability Issues of the TMDs Devices. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Rai, AK and Variar, HB and Shrivastava, M (2023) Circuit Reliability of MoS_2 Channel Based 2D Transistors. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Variar, HB and Gautam, SK and Kumar, A and Amogh, KM and Luo, J and Shi, N and Marreiro, D and Mallikarjunaswamy, S and Shrivastava, M (2023) Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection Concept. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Variar, HB and Singh, A and Soni, A and Shrivastava, M (2022) Exploring the Feasibility of AlN/GaN HEMTs for THz Applications Using a Novel Device-Circuit Co-Design Approach. In: 2022 IEEE International Conference on Emerging Electronics, 11- 14 Dec 2022, Bangalore.
Variar, HB and Singh, A and Somayaji, J and Shrivastava, M (2022) Device-Circuit Co-Design and ESD/HCI Reliability Aware Design of Field Plated RF LDMOS Devices. In: 2022 IEEE International Conference on Emerging Electronics, ICEE 2022, 11-14 Dec2022, Bangalore.
Variar, HB and Somayaji, J and Shrivastava, M (2022) Performance and Reliability Co-design of Ultra High Voltage LDMOS Devices. In: 2022 IEEE International Conference on Emerging Electronics, 11 - 14 Dec 2022, Bangalore.
Variar, HB and Somayaji, J and Shrivastava, M (2022) Physical Insights Into the ESD Behavior of Field Plated UHV LDMOS Devices. In: 2022 IEEE International Conference on Emerging Electronics, 11-14 December 2022, Bangalore, India.
Mishra, A and Meersha, A and Kranthi, NK and Trivedi, K and Variar, HB and Veenadhari Bellamkonda, NS and Raghavan, S and Shrivastava, M (2019) First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.
Hemanjaneyulu, K and Khaneja, M and Meersha, A and Variar, HB and Shrivastava, M (2018) Comprehensive Computational Modelling Approach for Graphene FETs. In: 4th IEEE International Conference on Emerging Electronics, ICEE 2018, 17-19 December 2018, Bengaluru.
Kumar, J and Meersha, A and Variar, HB and Mishra, A and Shrivastava, M (2022) Carbon Vacancy Assisted Contact Resistance Engineering in Graphene FETs. In: IEEE Transactions on Electron Devices, 69 (4). pp. 2066-2073.
Ansh, A and Shrivastava, M and Kumar, J and Sheoran, G and Variar, HB and Mishra, R and Kuruva, H and Meersha, A and Mishra, A and Raghavan, S (2020) Chalcogen-assisted enhanced atomic orbital interaction at TMD-metal interface and sulfur passivation for overall performance boost of 2-D TMD FETs. In: IEEE Transactions on Electron Devices, 67 (2). pp. 717-724.
