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Tailor, Ketankumar H and Shrivastava, Mayank and Gossner, Harald and Baghini, Maryam Shojaei and Rao, Ramgopal V (2015) Comparison of Breakdown Characteristics of DeNMOS Devices with Various Drain Structures. In: IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), JUN 01-04, 2015, Singapore, INDIA, pp. 736-739.
Tailor, Ketankumar H and Shrivastava, Mayank and Gossner, Harald and Baghini, Maryam Shojaei and Rao, Ramgopal V (2015) On the Breakdown Physics of Trench-Gate Drain Extended NMOS. In: IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), JUN 01-04, 2015, Singapore, INDIA, pp. 804-807.
Tailor, Ketankumar H and Shrivastava, Mayank and Gossner, Harald and Baghini, Maryam Shojaei and Rao, Valipe Ramgopal (2015) Part I: Physical Insights Into the Two-Stage Breakdown Characteristics of STI-Type Drain-Extended pMOS Device. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (12). pp. 4097-4104.
Tailor, Ketankumar H and Shrivastava, Mayank and Gossner, Harald and Baghini, Maryam Shojaei and Rao, Valipe Ramgopal (2015) Part II: Design of Well Doping Profile for Improved Breakdown and Mixed-Signal Performance of STI-Type DePMOS Device. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (12). pp. 4105-4113.
