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Madhavi, S and Venkataraman, V and Liu, CW and Sturm, JC (1996) High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques. In: 54th Annual Device Research Conference, JUN 24-26, 1996, SANTA BARBARA.
Madhavi, S and Venkataraman, V and Sturm, JC and Xie, YH (2000) Low- and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells. In: Physical Review B, 61 (24). pp. 16807-16818.
Chang, CL and Shukla, SP and Pan, W and Venkataraman, V and Sturm, JC and Shayegan, M (1998) Effective mass measurement in two-dimensional hole gas in strained $Si_{1-x-y}Ge_xC_y/ Si$(100) modulation doped heterostructures. In: Thin Solid Films, 321 (1-2). pp. 51-54.
