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Conference Paper

Gurumurthy, S and Sreedhar, AK and Bhat, HL and Sundersheshu, B and Bagai, RK and Kumar, V (1995) Hydrogen passivation of shallow dopants in indium doped bulk CdTe. In: Symposium Defect and Impurity Engineered Semiconductors and Devices, 17-21 April 1995, San Francisco, CA, USA, pp. 423-428.

Journal Article

Sreedhar, R and Sreedhar, AK (1998) Joule-Thomson cooling with binary mixtures. In: Infrared Physics & Technology, 39 (07). pp. 451-455.

Dutta, PS and Sreedhar, AK and Bhat, HL and Dubey, GC and Kumar, V and Dieguez, E and Pal, U and Piqueras, J (1996) Passivation of surface and bulk defects in p-GaSb by hydrogenated amorphous silicon treatment. In: Journal of Applied Physics, 79 (6). pp. 3246-3252.

Rao, KSRK and Sreedhar, AK and Bhat, HL and Singh, RA and Dubey, GC and Kumar, Vikram (1996) Fine structure in 1.4 eV luminescence band from plasma deposited amorphous silicon layers on silicon substrates. In: Applied Physics Letters, 68 (11). pp. 1458-1460.

Ventakaraghavan, R and Satyalakshmi, KM and Rao, KSRK and Sreedhar, AK and Hegde, MS and Bhat, HL (1996) Pulsed laser deposition of indium antimonide. In: Bulletin of Materials Science, 19 (1). pp. 123-129.

Dutta, PS and Sreedhar, AK and Bhat, HL and Dubey, GC and Kumar, Vikram and Dieguez, E (1995) Current transport properties of metal/hydrogenated amorphous silicon/GaSb structures. In: Applied Physics Letters, 67 (7). pp. 1001-1003.

Gurumurthy, S and Rao, KSRK and Sreedhar, AK and Bhat, HL and Sundersheshu, B and Bagai, RK and Kumaran, V (1994) Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium. In: Bulletin of materials science, 17 (6). 1057 -1064 .