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Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Kumar, Mahesh and Sinha, Neeraj and Jali, VM and Krupanidhi, SB (2014) Effects of growth temperature on nonpolar a-plane InN grown by molecular beam epitaxy. In: 10th International Conference on Nitride Semiconductors (ICNS), AUG 25-30, 2013, Washington, DC, pp. 932-935.
Sinha, Neeraj and Roul, Basanta and Mukundan, Shruti and Chandan, Greeshma and Mohan, Lokesh and Jali, VM and Krupanidhi, SB (2015) Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE. In: MATERIALS RESEARCH BULLETIN, 61 . pp. 539-543.
Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Kumar, Mahesh and Krupanidhi, SB and Sinha, Neeraj (2011) Evidences for ambient oxidation of indium nitride quantum dots. In: Physica Status Solidi B, 248 (12). pp. 2853-2856.
Roul, Basanta and Bhat, Thirumaleshwara N and Kumar, Mahesh and Rajpalke, Mohana K and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions. In: Solid State Communications, 151 (20). pp. 1420-1423.
Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes. In: Journal of Applied Physics, 110 (6).
Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Study of band offsets in InN/Ge heterojunctions. In: Surface Science, 605 (15-16). L33-L37.
Rajpalke, Mohana K and Roul, Basanta and Kumar, Mahesh and Bhat, Thirumaleshwara N and Sinha, Neeraj and Krupanidhi, SB (2011) Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. In: Scripta Materialia, 65 (1). pp. 33-36.
Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Misra, P and Kukreja, LM and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Temperature-dependent photoluminescence of GaN grown on beta-Si3N4/Si (111) by plasma-assisted MBE. In: Journal of Luminescence, 131 (4). pp. 614-619.
Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE. In: Journal of Nanoparticle Research, 13 (3). pp. 1281-1287.
Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Negative differential capacitance in n-GaN/p-Si heterojunctions. In: Solid State Communications, 151 (5). pp. 356-359.
Roul, Basanta and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes. In: Journal of Applied Physics, 109 (4).
Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Roul, Basanta and Kumar, Mahesh and Misra, P and Kukreja, LM and Sinha, Neeraj and Krupanidhi, SB (2011) Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE. In: Journal of Crystal Growth, 314 (1). pp. 5-8.
Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE. In: Applied Surface Science, 257 (6). pp. 2107-2110.
Bhat, Thirumaleshwara N and Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Krupanidhi, SB and Sinha, Neeraj (2011) Band alignment studies in InN/p-Si(100) heterojunctions by x-ray photoelectron spectroscopy. In: Journal of Applied Physics, 109 (12). p. 123707.
Kumari, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Sinha, Neeraj and Kalghatgi, AT and Krupanidhib, SB (2010) Droplet Epitaxy of InN Quantum Dots on Si(111) by RF Plasma-Assisted Molecular Beam Epitaxy. In: Advanced Science Letters, 3 (4). pp. 379-384.
Bhat, Thirumaleshwara N and Roul, Basanta and Rajpalke, Mohana K and Kumar, Mahesh and Krupanidhi, SB and Sinha, Neeraj (2010) Temperature dependent transport behavior of n-InN nanodot/p-Si heterojunction structures. In: Applied Physics Letters, 97 (20).
Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Misra, P and Kukreja, LM and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2010) Improved growth of GaN layers on ultra thin silicon nitride/Si (111) by RF-MBE. In: Materials Research Bulletin, 45 (11). pp. 1581-1585.
Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2010) Indium Nitride Nanometric-Objects on c-Sapphire Grown by Plasma-Assisted Molecular Beam Epitaxy. In: Nanoscience and Nanotechnology Letters, 2 (3). pp. 257-260.
Kumar, Mahesh and Bhat, TN and Rajpalke, MK and Roul, B and Misra, P and Kukreja, LM and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2010) Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy. In: Bulletin of Materials Science, 33 (3). pp. 221-226.
Das, Bibhuti B and Ajithkumar, TG and Sinha, Neeraj and Opella, Stanley J and Ramanathan, KV (2007) Cross- and axial-peak intensities in 2D-SLF experiments based on cross-polarization—The role of the initial density matrix. In: Journal of Magnetic Resonance, 185 (2). pp. 308-317.
Mahesh, TS and Sinha, Neeraj and Ghosh, Arindam and Das, Ranabir and Suryaprakash, N and Levitt, Malcolm H and Ramanathan, KV and Kumar, Anil (2003) Quantum information processing by NMR using strongly coupled spins. In: Current Science, 85 (7). pp. 932-944.
Ramanathan, KV and Sinha, Neeraj (2003) Ordering in nematic liquid crystals from NMR cross-polarization studies. In: Pramana, Journal of Physics, 61 (2). pp. 249-62.
Ramanathan, Krishna V and Sinha, Neeraj (2002) Cross-polarisation applied to the study of liquid crsytalline ordering. In: Monatshefte für Chemie / Chemical Monthly, 133 (12). pp. 1535-1548.
Murali, KVRM and Sinha, Neeraj and Mahesh, TS and Levitt, Malcolm H and Ramanathan, KV and Kumar, Anil (2002) Quantum-information processing by nuclear magnetic resonance: Experimental implementation of half-adder and subtractor operations using an oriented spin-7/2 system. In: Physical Review A (Atomic, Molecular, and Optical Physics), 66 (2). 022313/1-5.
Venkatraman, TN and Sinha, Neeraj and Ramanathan, KV (2002) Cross-polarization from the dipolar reservoir under the mismatched Hartmann-Hahn condition. In: Journal of Magnetic Resonance, 157 (1). pp. 137-140.
Sinha, Neeraj and Ramanathan, KV and Leblanc, K and Judeinstein, P and Bayle, JP (2002) Ordering of a lateral crown ether and terminal short POE chains in some symmetrical nematogens by $^{13}C\hspace{2mm}NMR$. In: Liquid Crystals, 29 (3). pp. 449-457.
Mahesh, TS and Sinha, Neeraj and Ramanathan, KV and Kumar, Anil (2002) Ensemble quantum-information processing by NMR: Implementation of gates and the creation of pseudopure states using dipolar coupled spins as qubits. In: Physical Review A (Atomic, Molecular, and Optical Physics), 65 (2). 022312/1-6.
Sinha, Neeraj and Mahesh, TS and Ramanathan, KV and Kumar, Anil (2001) Toward quantum information processing by nuclear magnetic resonance: Pseudopure states and logical operations using selective pulses on an oriented spin 3/2 nucleus. In: Journal of Chemical Physics, 114 (10). pp. 4415-4420.
Judeinstein, P and Berdague, P and Bayle, JP and Sinha, Neeraj and Ramanathan, KV (2001) Nematogens containing oxyethylene units at a lateral or terminal position and their mixtures with salts. In: Liquid Crystals, 28 (11). pp. 1691-1698.
Sinha, Neeraj and Ramanathan, KV (2000) Use of polarization inversion for resolution of small dipolar couplings in SLF-2D NMR experiments ± an application to liquid crystals. In: Chemical Physics Letters, 332 (1-2). pp. 125-130.
