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Shankar, Bhawani and Soni, Ankit and Gupta, Sayak Dutta and Shrivastava, Mayank (2018) Safe Operating Area (SOA) Reliability of Polarization Super Junction (PSJ) GaN FETs. In: 2018 IEEE International Reliability Physics Symposium (IRPS), 11-15 March 2018, Burlingame, CA, USA.
Shankar, Bhawani and Soni, Ankit and Gupta, Sayak Dutta and Sengupta, R and Khand, H and Mohan, N and Raghavan, Srinivasan and Shrivastava, Mayank (2018) On the Trap Assisted Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs. In: 2018 IEEE International Reliability Physics Symposium, IRPS 2018; Burlingame; United States; 11 March, 11-15 March 2018, Burlingame, CA, USA.
Joshi, Vipin and Shankar, Bhawani and Tiwari, Shree Prakash and Shrivastava, Mayank (2017) Dependence of Avalanche Breakdown on Surface & Buffer Traps in AlGaN/GaN HEMTs. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), SEP 07-09, 2017, Kamakura, JAPAN, pp. 109-112.
Shankar, Bhawani and Sengupta, Rudrarup and Gupta, Sayak Dutta and Soni, Ankit and Mohan, Nagaboopathy and Bhat, Navakanta and Raghavan, Srinivasan and Shrivastava, Mayank (2017) On the ESD Behavior of AlGaN/GaN Schottky Diodes and Trap Assisted Failure Mechanism. In: 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), SEP 10-14, 2017, Tucson, AZ.
Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakanta and Shrivastava, Mayank (2017) ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis. In: 30th International Conference on VLSI Design / 16th International Conference on Embedded Systems (VLSID), JAN 07-11, 2017, Hyderabad, INDIA, pp. 361-365.
Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Chandrasekar, Hareesh and Mohan, Nagaboopathy and Mohta, Neha and Ramesh, Nayana and Prabhu, Shreesha and Kulkarni, Abhay and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakant and Shrivastava, Mayank (2017) Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium (IRPS), APR 02-06, 2017, Monterey, CA.
Shankar, Bhawani and Shrivastava, Mayank (2016) Unique ESD Behavior and Failure Modes of AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium (IRPS), APR 17-21, 2016, Pasadena, CA.
Shankar, Bhawani and Shrivastava, Mayank (2019) Safe Operating Area of Polarization Super-junction GaN HEMTs and Diodes. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (10). pp. 4140-4147.
Shankar, Bhawani and Raghavan, Srinivasan and Shrivastava, Mayank (2019) ESD Reliability of AlGaN/GaN HEMT Technology. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (9). pp. 3756-3763.
Shankar, Bhawani and Soni, Ankit and Chandrasekar, Hareesh and Raghavan, Srinivasan and Shrivastava, Mayank (2019) First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (8). pp. 3433-3440.
Shankar, Bhawani and Gupta, Sayak Dutta and Soni, Ankit and Raghavan, Srinivasan and Shrivastava, Mayank (2019) ESD Behavior of AlGaN/GaN Schottky Diodes. In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 19 (2). pp. 437-444.
Gupta, Sayak Dutta and Soni, Ankit and Joshi, Vipin and Kumar, Jeevesh and Sengupta, Rudrarup and Khand, Heena and Shankar, Bhawani and Mohan, Nagaboopathy and Raghavan, Srinivasan and Bhat, Navakanta and Shrivastava, Mayank (2019) Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By AlxTi1-xO Based Gate Stack Engineering. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (6). pp. 2544-2550.
