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Conference Paper

Shankar, B and Soni, A and Dutta Gupta, S and Shikha, S and Singh, S and Raghavan, S and Shrivastava, M (2019) Time Dependent Early breakdown of AIGaN/GaN Epi Stacks and Shift in SOA Boundary of HEMTs under Fast Cyclic Transient Stress. In: 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, 1 December 2018- 5 December 2018, San Francisco, 34.6.1-34.6.4.

Dutta Gupta, S and Joshi, V and Shankar, B and Shikha, S and Raghavan, S and Shrivastava, M (2019) UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage Gate Leakage Instabilities. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.

Shankar, B and Singh, R and Sengupta, R and Khand, H and Soni, A and Gupta, SD and Raghavan, S and Gossner, H and Shrivastava, M (2018) Trap assisted stress induced ESD reliability of GaN schottky diodes. In: 40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018, 23 - 28 September 2018, Reno.

Journal Article

Shankar, B and Shikha, S and Singh, A and Kumar, J and Soni, A and Dutta Gupta, S and Raghavan, S and Shrivastava, M (2020) Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs under Fast Cyclic Transient Stress. In: IEEE Transactions on Device and Materials Reliability, 20 (3). pp. 562-569.

Shankar, B and Soni, AG and Shrivastava, M (2020) Electro-thermo-mechanical reliability of recessed barrier AlGaN/GaN schottky diodes under pulse switching conditions. In: IEEE Transactions on Electron Devices, 67 (5). pp. 2044-2051.

Shankar, B and Raghavan, S and Shrivastava, M (2020) Distinct Failure Modes of AlGaN/GaN HEMTs under ESD Conditions. In: IEEE Transactions on Electron Devices, 67 (4). pp. 1567-1574.

Shankar, B and Shrivastava, M (2019) Safe Operating Area of Polarization Super-junction GaN HEMTs and Diodes. In: IEEE Transactions on Electron Devices, 66 (10). pp. 4140-4147.