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Kranthi, NK and Garg, C and Kumar, BS and Salman, A and Boselli, G and Shrivastava, M (2020) How to Achieve Moving Current Filament in High Voltage LDMOS Devices: Physical Insights Design Guidelines for Self-Protected Concepts. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA, USA.
Kranthi, NK and Sampath Kumar, B and Salman, A and Boselli, G and Shrivastava, M (2020) Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices. In: 2020 IEEE International Reliability Physics Symposium, IRPS 2020, 28 April-30 May 2020, Virtual, Online; United States.
Kranthi, NK and Kumar, BS and Salman, A and Boselli, G and Shrivastava, M (2019) Performance and Reliability Co-design of LDMOS-SCR for Self-Protected High Voltage Applications On-Chip. In: 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019, 19 May 2019-23 May 2019, Shanghai, pp. 407-410.
Karmel Kranthi, N and Salman, A and Boselli, G and Shrivastava, M (2019) Current Filament Dynamics under ESD Stress in High Voltage (Bidirectional) SCRs and It's Implications on Power Law Behavior. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.
Karmel Kranthi, N and Sampath Kumar, B and Salman, A and Boselli, G and Shrivastava, M (2019) Physical Insights into the Low Current ESD Failure of LDMOS-SCR and its Implication on Power Scalability. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.
