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Reddy, Varra Niteesh and Gunasekhar, KR (2018) Modified Interface Properties of Au/n-type GaN Schottky Junction with a High-k Ba0.6Sr0.4TiO3 Insulating Layer. In: JOURNAL OF ELECTRONIC MATERIALS, 47 (11). pp. 6458-6466.
Reddy, Varra Niteesh and Reddy, M. Siva Pratap and Gunasekhar, K R and Lee, Jung-Hee (2018) Temperature-dependent electrical characteristics and carrier transport mechanism of p-Cu2ZnSnS4/n-GaN heterojunctions. In: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 124 (4).
Reddy, Varra Niteesh and Padma, R and Gunasekhar, KR (2018) Analysis of electronic parameters and frequency-dependent properties of Au/NiO/n-GaN heterojunctions. In: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 124 (1).
