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Goswami, J and Shivashankar, SA and Raghunathan, L and Devi, A and Ramanathan, KV (1994) Comparison of growth and microstructure of copper films deposited from different Cu(II) precursors. In: Advanced Metallization for Devices and Circuits—Science Technology and Manufacturing III, 4-8 April 1994, Pittsburgh, PA, USA, pp. 691-696.
Patnaik, S and Row, TNG and Raghunathan, L and Devi, A and Goswami, J and Shivashankar, SA and Chandrasekaran, S and Robinson, WT (1996) Low-temperature structure of two copper-based precursors for MOCVD: Aquabis(tert-butyl acetoacetato)copper(II) and Bis(dipivaloylmethanido)copper(II). In: Acta Crystallographica Section C, 52 (part 4). pp. 891-894.
Goswami, J and Raghunathan, L and Devi, A and Shivashankar, SA and Chandrasekaran, S (1996) Chemical vapour deposition of thin copper films using a new metalorganic precursor. In: Journal of Materials Science Letters, 15 (7). pp. 573-575.