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Kumar, Sandeep and Soman, Rohith and Pratiyush, Anamika Singh and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) A Performance Comparison Between beta-Ga2O3 and GaN HEMTs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (8). pp. 3310-3317.
Pratiyush, Anamika Singh and Ul Muazzam, Usman and Kumar, Sandeep and Vijayakumar, P and Ganesamoorthy, S and Subramanian, N and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) Optical Float-Zone Grown Bulk beta-Ga2O3-Based Linear MSM Array of UV-C Photodetectors. In: IEEE PHOTONICS TECHNOLOGY LETTERS, 31 (12). pp. 923-926.
Kumar, Sandeep and Kumar, Himanshu and Vura, Sandeep and Pratiyush, Anamika Singh and Charan, Vanjari Sai and Dolmanan, Surani B and Tripathy, Sudhiranjan and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) Investigation of Ta2O5 as an Alternative High-k Dielectric for InAlN/GaN MOS-HEMT on Si. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (3). pp. 1230-1235.
Pratiyush, Anamika Singh and Xia, Zhanbo and Kumar, Sandeep and Zhang, Yuewei and Joishi, Chandan and Muralidharan, Rangarajan and Rajan, Siddharth and Nath, Digbijoy N (2018) MBE-Grown beta-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio similar to 10(7). In: IEEE PHOTONICS TECHNOLOGY LETTERS, 30 (23). pp. 2025-2028.
Jaiswal, Piyush and Ul Muazzam, Usman and Pratiyush, Anamika Singh and Mohan, Nagaboopathy and Raghavan, Srinivasan and Muralidharan, R and Shivashankar, S A and Nath, Digbijoy N (2018) Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics. In: APPLIED PHYSICS LETTERS, 112 (2).
Pratiyush, Anamika Singh and Krishnamoorthy, Sriram and Solanke, Swanand Vishnu and Xia, Zhanbo and Muralidharan, Rangarajan and Rajan, Siddharth and Nath, Digbijoy N (2017) High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector. In: APPLIED PHYSICS LETTERS, 110 (22).
Pratiyush, Anamika Singh and Krishnamoorthy, Sriram and Solanke, Swanand Vishnu and Xia, Zhanbo and Muralidharan, Rangarajan and Rajan, Siddharth and Nath, Digbijoy N (2017) High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector. In: APPLIED PHYSICS LETTERS, 110 (22).
Kumar, Sandeep and Pratiyush, Anamika Singh and Dolmanan, Surani B and Tripathy, Sudhiranjan and Muralidharan, Rangarajan and Nath, Digbijoy N (2017) UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio > 10(7). In: APPLIED PHYSICS LETTERS, 111 (25).
