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Number of items: 9.

Conference Paper

Singh, M and Pradhan, JR and Dasgupta, S (2022) Inkjet-printed a-IGZO/Ag Schottky diodes with> 10⁶ rectification ratio. In: 2022 IEEE International Conference on Emerging Electronics (ICEE), 11-14 December 2022, Bangalore, India.

Devabharathi, N and Pradhan, JR and Dasgupta, S (2022) Inkjet-printed mesoporous indium oxide-based near-vertical transport thin film transistors and pseudo-CMOS inverters. In: 2022 IEEE International Conference on Emerging Electronics, 11 - 14 Dec 2022, Bangalore.

Devabharathi, N and Mondal, SK and Pradhan, JR and Dasgupta, S (2020) Fully Printed Vertical Transport Edge FETs for High Power Oxide Electronics. In: 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings, 6-21 April 2020, Penang, Malaysia, Malaysia.

Journal Article

Divya, M and Cherukupally, N and Gogoi, SK and Pradhan, JR and Mondal, SK and Jain, M and Senyshyn, A and Dasgupta, S (2023) Super Flexible and High Mobility Inorganic/Organic Composite Semiconductors for Printed Electronics on Polymer Substrates. In: Advanced Materials Technologies .

Priyadarsini, SS and Saxena, S and Pradhan, JR and Dasgupta, S (2022) Inkjet-printed transparent micro-supercapacitors with morphology tailored co-continuous mesoporous Mn3O4. In: Journal of Materials Chemistry A .

Devabharathi, N and Pradhan, JR and Priyadarsini, SS and Brezesinski, T and Dasgupta, S (2022) Inkjet-Printed Narrow-Channel Mesoporous Oxide-Based n-Type TFTs and All-Oxide CMOS Electronics. In: Advanced Materials Interfaces .

Pradhan, JR and Singh, M and Dasgupta, S (2022) Inkjet-Printed, Deep Subthreshold Operated Pseudo-CMOS Inverters with High Voltage Gain and Low Power Consumption. In: Advanced Electronic Materials .

Divya, M and Pradhan, JR and Priyadarsini, SS and Dasgupta, S (2022) High Operation Frequency and Strain Tolerance of Fully Printed Oxide Thin Film Transistors and Circuits on PET Substrates. In: Small .

Mondal, SK and Biswas, A and Pradhan, JR and Dasgupta, S (2021) Inkjet-Printed MoS2 Transistors with Predominantly Intraflake Transport. In: Small Methods, 5 (12).

This list was generated on Fri Apr 19 05:31:44 2024 IST.