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Kumar, J and Kuruva, H and Variar, HB and Patbhaje, U and Shrivastava, M (2023) Atomic-level Insight and Quantum Chemistry of Ambient Reliability Issues of the TMDs Devices. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Verma, R and Patbhaje, U and Kumar, J and Rai, AK and Shrivastava, M (2023) OFF State Reliability Challenges of Monolayer WS2FET Photodetector: Impact on the Dark and Photo-Illuminated State. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Patbhaje, U and Verma, R and Kumar, J and Ansh, A and Shrivastava, M (2023) Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2FETs. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Kumar, J and Patbhaje, U and Shrivastava, M (2022) Unveiling Additional Ambient Degradation Issues of Phosphorene FETs Under Laser Exposure and Positive Gate Bias. In: 2022 IEEE International Conference on Emerging Electronics, 11- 14 Dec 2022, Bangalore, India.
Rai, AK and Shah, AA and Kumar, J and Chattaraj, S and Dar, AB and Patbhaje, U and Shrivastava, M (2024) MoS2 Field-Effect Transistor Performance Enhancement by Contact Doping and Defect Passivation via Fluorine Ions and Its Cyclic Field-Assisted Activation. In: ACS Nano, 18 (8). pp. 6215-6228.
Ansh, A and Patbhaje, U and Kumar, J and Meersha, A and Shrivastava, M (2023) Origin of electrically induced defects in monolayer MoS2 grown by chemical vapor deposition. In: Communications Materials, 4 (1).
Kumar, J and Patbhaje, U and Shrivastava, M (2022) Breathing Mode's Temperature Coefficient Estimation and Interlayer Phonon Scattering Model of Few-Layer Phosphorene. In: ACS Omega, 7 (48). pp. 43462-43467.
Kumar, J and Patbhaje, U and Shrivastava, M (2022) Role of Channel Inversion in Ambient Degradation of Phosphorene FETs. In: IEEE Transactions on Electron Devices, 69 (6). pp. 3353-3358.
