|
 | Up a level |
Mishra, A and Kumar, BS and Monishmurali, M and Suzaad, SA and Kumar, S and Sanjay, KP and Singh, AK and Gupta, A and Shrivastava, M (2023) Extremely Large Breakdown to Snapback Voltage Offset (V_t1 > > V_BD): Another Way to Improve ESD Resilience of LDMOS Devices. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Monishmurali, M and Kranthi, NK and Boselli, G and Shrivastava, M (2023) Impact of Thin-oxide Gate on the On-Resistance of HV-PNP Under ESD Stress. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Jatin, J and Monishmurali, M and Shrivastava, M (2023) Multi-finger turn-on: A potential cause of premature failure in Drain Extended HV Nanosheet Devices. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Jatin, J and Monishmurali, M and Gautam, SK and Shrivastava, M (2022) Performance and Reliability Co-Design of HV devices in Vertically Stacked Nanosheet Technology. In: 2022 IEEE International Conference on Emerging Electronics,, 11- 14 Dec 2022, Bangalore.
Gautam, SK and Jatin, J and Monishmurali, M and Shrivastava, M (2022) The Physical Insight into Holding Voltage Engineering of SCR for ESD Protection. In: 2022 IEEE International Conference on Emerging Electronics, 11 - 14 Dec 2022, Bangalore.
Monishmurali, M and Kranthi, NK and Boselli, G and Shrivastava, M (2022) Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR Devices. In: 2022 IEEE International Reliability Physics Symposium, IRPS 2022, 27 March 2022 through 31 March 2022, Dallas, 6C11-6C16.
Mishra, A and Boeila, SK and Singh, AK and Gupta, S and Singh, SK and Monishmurali, M and Gupta, A and Shrivastava, M (2022) Inverted SOA and Transient Non-Linearity of LDMOS Devices With RESURF-Implant. In: 2022 IEEE International Conference on Emerging Electronics, 11 - 14 December 2022, Bangalore, India.
Monishmurali, M and Shrivastava, M (2021) A Novel High Voltage Drain Extended FinFET SCR for SoC Applications. In: 2021 IEEE International Reliability Physics Symposium, IRPS 2021, 21-24 Mar 2021, Monterey, Virtual.
Monishmurali, M and Shrivastava, M (2021) Peculiar Current Instabilities Failure Mechanism in Vertically Stacked Nanosheet ggN-FET. In: 2021 IEEE International Reliability Physics Symposium, IRPS 2021, 21-24 Mar 2021, Monterey.
Jhnanesh Somayaji, B and Monishmurali, M and Ajay Singh, N and Kranthi, K and Shrivastava, M (2020) 3D TCAD studies of snapback driven failure in punch-through TVS diodes under system level esd stress conditions. In: Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 13 - 18 September, Reno.
Monishmurali, M and Paul, M and Shrivastava, M (2020) Improved Turn-on Uniformity & Failure Current Density by n-& p-Tap Engineering in Fin Based SCRs. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA, USA.
