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Number of items: 8.

Conference Paper

Baskar, Sam S and Ashwin, Lal and Madhavi, S and Rudra, Pratap (2009) Design of Piezoelectric MEMS Cantilever for High Speed AFM. In: International Conference on MEMS (ICMEMS 2009), January 3-5, 2009, IIT Madras.

Madhavi, S and Venkataraman, V and Xie, YH (2000) High Room Temperature Hole Mobility In $Ge_{0.7}Si_{0.3}/Ge/Ge_{0.7}Si_{0.3}$ Modulation Doped Heterostructures In The Absence Of parallel Conduction. In: 58th DRC Device Research Conference, 2000. Conference Digest, 19-21 June, Denver,Colorado, pp. 29-30.

Madhavi, S and Venkataraman, V (2000) Mobility limiting mechanisms in modulation doped Si/SiGe and Ge/SiGe heterostructures. In: Tenth International Workshop on the Physics of Semiconductor Devices, 14-18 Dec. 1999, New Delhi, India, pp. 407-410.

Madhavi, S and Venkataraman, V and Liu, CW and Sturm, JC (1996) High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques. In: 54th Annual Device Research Conference, JUN 24-26, 1996, SANTA BARBARA.

Journal Article

Madhavi, S and Venkataraman, V and Xie, YH (2001) High room-temperature hole mobility in Ge0.7Si0.3/Ge/Ge0.7Si0.3 modulation-doped heterostructures. In: Journal of Applied Physics, 89 (4). pp. 2497-2499.

Madhavi, S and Venkataraman, V (2001) High room-temperature hole mobility in $Ge_{0.7 Si_0.3}/Ge/Ge_{0.7}Si_{0.3}$ modulation-doped heterostructures. In: Journal of Applied Physics, 89 (4). pp. 2497-2499.

Madhavi, S and Venkataraman, V (2000) Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe heterostructures. In: Thin Solid Films, 369 (1-2). pp. 333-337.

Madhavi, S and Venkataraman, V and Sturm, JC and Xie, YH (2000) Low- and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells. In: Physical Review B, 61 (24). pp. 16807-16818.

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