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Liu, CW and Venkataraman, V (1997) Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition. In: Materials Chemistry and Physics, 49 (1). pp. 29-32.
Liu, CW and Venkataramana, V (1996) Electron Cyclotron Resonance in Strained Si and Si0.94Ge0.06 Channels on Relaxed Si0.62Ge0.38 Buffers Grown by Rapid Thermal Chemical Vapor Deposition. In: MRS Proceedings, 429 . p. 373.
Madhavi, S and Venkataraman, V and Liu, CW and Sturm, JC (1996) High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques. In: 54th Annual Device Research Conference, JUN 24-26, 1996, SANTA BARBARA.