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Conference Proceedings

Paul, Milova and Kumar, B Sampath and Russ, Christian and Gossner, Harald and Shrivastava, Mayank (2017) FinFET SCR: Design Challenges and Novel Fin SCR Approaches for On-Chip ESD Protection. In: 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), SEP 10-14, 2017, Tucson, AZ.

Kumar, B Sampath and Paul, Milova and Shrivastava, Mayank (2017) On the Design Challenges of Drain Extended FinFETs for Advance SoC Integration. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), SEP 07-09, 2017, Kamakura, JAPAN, pp. 189-192.

Paul, Milova and Russ, Christian and Kumar, B Sampath and Gossner, Harald and Shrivastava, Mayank (2017) Physics of Current Filamentation in ggNMOS Revisited: Was Our Understanding Scientifically Complete? In: 30th International Conference on VLSI Design / 16th International Conference on Embedded Systems (VLSID), JAN 07-11, 2017, Hyderabad, INDIA, pp. 391-394.

Conference Paper

Kumar, B Sampath and Paul, Milova and Shrivastava, Mayank and Gossner, Harald (2018) Performance and Reliability Insights of Drain Extended FinFET Devices for High Voltage SoC Applications. In: 30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), MAY 13-17, 2018, Chicago, IL, pp. 72-75.

Journal Article

Paul, Milova and Kumar, B Sampath and Nagothu, Kranthi Karmel and Singhal, Pulkit and Gossner, Harald and Shrivastava, Mayank (2019) Drain-Extended FinFET With Embedded SCR (DeFinFET-SCR) for High-Voltage ESD Protection and Self-Protected Designs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (12). pp. 5072-5079.

Paul, Milova and Kumar, B Sampath and Russ, Christian and Gossner, Harald and Shrivastava, Mayank (2018) Challenges & Physical Insights Into the Design of Fin-Based SCRs and a Novel Fin-SCR for Efficient On-Chip ESD Protection. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (11). pp. 4755-4763.

Paul, Milova and Russ, Christian and Kumar, B Sampath and Gossner, Harald and Shrivastava, Mayank (2018) Physics of Current Filamentation in ggNMOS Devices Under ESD Condition Revisited. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (7). pp. 2981-2989.

Kumar, B Sampath and Shrivastava, Mayank (2018) Part I: On the Unification of Physics of Quasi-Saturation in LDMOS Devices. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (1). pp. 191-198.

Kumar, B Sampath and Shrivastava, Mayank (2018) Part II: RF, ESD, HCI, SOA, and Self Heating Concerns in LDMOS Devices Versus Quasi-Saturation. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (1). pp. 199-206.