ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Browse by Author

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Item Type | No Grouping
Number of items: 2.

Conference Proceedings

Shankar, Bhawani and Soni, Ankit and Gupta, Sayak Dutta and Sengupta, R and Khand, H and Mohan, N and Raghavan, Srinivasan and Shrivastava, Mayank (2018) On the Trap Assisted Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs. In: 2018 IEEE International Reliability Physics Symposium, IRPS 2018; Burlingame; United States; 11 March, 11-15 March 2018, Burlingame, CA, USA.

Conference Paper

Shankar, B and Singh, R and Sengupta, R and Khand, H and Soni, A and Gupta, SD and Raghavan, S and Gossner, H and Shrivastava, M (2018) Trap assisted stress induced ESD reliability of GaN schottky diodes. In: 40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018, 23 - 28 September 2018, Reno.

This list was generated on Fri Mar 29 15:48:22 2024 IST.