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Packiaraj, D and Ramesh, M and Vinoy, KJ and Kalghatgi, AT (2011) Dual band(WLAN & WiMAX) suppressed harmonic microstrip filter with perturbed ground. In: 2011 National Conference on Communications (NCC), 28-30 Jan. 2011, Bangalore, India.
Packiaraj, D and Kalghatgi, AT and Ramesh, M and Vinoy, KJ (2012) Analysis of modified microstrip line and its application. In: 2012 National Conference on Communications (NCC), 3-5 Feb. 2012, Kharagpur.
Packiaraj, D and Ramesh, M and Kalghatgi, AT and Vinoy, KJ (2011) A multi-layer ultra wide band power splitter. In: International Radar Symposium India, 19 - 22 December, Bangalore, India.
Packiaraj, D and Ramesh, M and Kalghatgi, AT and Vinoy, KJ (2010) Elliptic slot antenna for broadband wireless communications. In: Communications (NCC), 2010 National Conference on , 29-31 Jan. 2010, Chennai.
Packiaraj, D and Vinoy, KJ and Ramesh, M and Kalghatgi, AT (2013) Analysis of multi-conductor coupled microstrip lines with an aperture in the ground plane for the design of a broadband filter. In: Journal of Electromagnetic Waves and Applications, 27 (7). pp. 856-867.
Packiaraj, D and Vinoy, KJ and Nagarajarao, P and Ramesh, M and Kalghatgi, AT (2013) Miniaturized Defected Ground High Isolation Crossovers. In: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 23 (7). pp. 347-349.
Roul, Basanta and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Kalghatgi, AT and Krupanidhi, SB (2012) Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE. In: Journal of Crystal Growth, 354 (1). pp. 208-211.
Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2012) Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions. In: Solid State Communications, 152 (18). pp. 1771-1775.
Kumar, Mahesh and Bhat, Thirumaleshwara N and Roul, Basanta and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE. In: MATERIALS RESEARCH BULLETIN, 47 (6). pp. 1306-1309.
Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Carrier-transport studies of III-nitride/Si3N4/Si isotype heterojunctions. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209 (5). pp. 994-997.
Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Valence band offset at GaN/beta-Si3N4 and beta-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy. In: THIN SOLID FILMS, 520 (15). pp. 4911-4915.
Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Kalghatgi, AT and Krupanidhi, SB (2012) Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE. In: Journal of Alloys and Compounds, 513 . pp. 6-9.
Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Band-Structure Lineup at In0.2Ga0.8N/Si Heterostructures by X-ray Photoelectron Spectroscopy. In: Japanese Journal of Applied Physics, 51 (2).
Packiaraj, D and Vinoy, KJ and Kalghatgi, AT (2012) Approximate synthesis formulas for microstrip line with aperture in ground plane. In: International Journal of RF and Microwave Computer-Aided Engineering, 22 (1, SI). pp. 124-130.
Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2012) Determination of MBE grown wurtzite GaN/Ge3N4/Ge heterojunctions band offset by X-ray photoelectron spectroscopy. In: Physica Status Solidi B, 249 (1). pp. 58-61.
Roul, Basanta and Bhat, Thirumaleshwara N and Kumar, Mahesh and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209 (8). pp. 1575-1578.
Kumar, Mahesh and Roul, Basanta and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2012) Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions. In: CURRENT APPLIED PHYSICS, 13 (1). pp. 26-30.
Roul, Basanta and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Kalghatgi, AT and Krupanidhi, SB and Kumar, Nitesh and Sundaresan, A (2011) Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films. In: Applied Physics Letters, 99 (16).
Kumar, Mahesh and Roul, Basanta and Shetty, Arjun and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2011) Temperature dependent transport studies in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substrate. In: Applied Physics Letters, 99 (15).
Roul, Basanta and Bhat, Thirumaleshwara N and Kumar, Mahesh and Rajpalke, Mohana K and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions. In: Solid State Communications, 151 (20). pp. 1420-1423.
Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes. In: Journal of Applied Physics, 110 (6).
Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Study of band offsets in InN/Ge heterojunctions. In: Surface Science, 605 (15-16). L33-L37.
Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Dash, S and Tyagi, AK and Kalghatgi, AT and Krupanidhi, SB (2011) Reduction of oxygen impurity at GaN/beta-Si(3)N(4)/Si interface via SiO(2) to Ga(2)O conversion by exposing of Si surface under Ga flux. In: Journal of Crystal Growth, 327 (1). pp. 272-275.
Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Misra, P and Kukreja, LM and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Temperature-dependent photoluminescence of GaN grown on beta-Si3N4/Si (111) by plasma-assisted MBE. In: Journal of Luminescence, 131 (4). pp. 614-619.
Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE. In: Journal of Nanoparticle Research, 13 (3). pp. 1281-1287.
Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Negative differential capacitance in n-GaN/p-Si heterojunctions. In: Solid State Communications, 151 (5). pp. 356-359.
Roul, Basanta and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes. In: Journal of Applied Physics, 109 (4).
Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE. In: Applied Surface Science, 257 (6). pp. 2107-2110.
Packiaraj, D and Vinoy, KJ and Ramesh, M and Kalghatgi, AT (2011) High selectivity miniaturized broadband filter. In: Microwave and Optical Technology Letters, 53 (1). pp. 184-187.
Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2011) Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes. In: Journal of Nanomaterials .
Packiaraj, D and Vinoy, KJ and Ramesh, M and Kalghatgi, AT (2011) Design of compact low pass filter with wide stop band using tri-section stepped impedance resonator. In: Archiv für Elekronik und Übertragungstechnik (AEÜ) / International Journal of Electronics and Communications, 65 (12). pp. 1012-1014.
Packiaraj, D and Vinoy, KJ and Ramesh, M and Kalghatgi, AT and Chaware, Varsha and Phatak, GJ (2011) LTCC ultra wide band filter. In: Microwave and Optical Technology Letters, 53 (11). pp. 2580-2583.
Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Roul, Basanta and Kalghatgi, AT and Krupanidhi, SB (2011) Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy. In: Journal of Applied Physics, 110 (11). 114317 -114317.
Kumari, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Sinha, Neeraj and Kalghatgi, AT and Krupanidhib, SB (2010) Droplet Epitaxy of InN Quantum Dots on Si(111) by RF Plasma-Assisted Molecular Beam Epitaxy. In: Advanced Science Letters, 3 (4). pp. 379-384.
Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Misra, P and Kukreja, LM and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2010) Improved growth of GaN layers on ultra thin silicon nitride/Si (111) by RF-MBE. In: Materials Research Bulletin, 45 (11). pp. 1581-1585.
Singh, Jitendra and Kalghatgi, AT and Parui, Jayanta and Krupanidhi, SB (2010) High-temperature dielectric response in pulsed laser deposited Bi1.5Zn1.0Nb1.5O7 thin films. In: Journal of Applied Physics, 108 (5).
Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2010) Indium Nitride Nanometric-Objects on c-Sapphire Grown by Plasma-Assisted Molecular Beam Epitaxy. In: Nanoscience and Nanotechnology Letters, 2 (3). pp. 257-260.
Packiaraj, D and Vinoy, KJ and Ramesh, M and Kalghatgi, AT (2010) Design of a compact wideband bandpass filter. In: Microwave and Optical Technology Letters, 52 (6). pp. 1387-1389.
Kumar, Mahesh and Bhat, TN and Rajpalke, MK and Roul, B and Misra, P and Kukreja, LM and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2010) Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy. In: Bulletin of Materials Science, 33 (3). pp. 221-226.
Packiaraj, D and Vinoy, KJ and Kalghatgi, AT (2009) Analysis And Design Of Two Layered Ultra Wide Band Filter. In: Journal Of Electromagnetic Waves And Applications, 23 (8-9). pp. 1235-1243.
Natarajan, Aravind and Kalghatgi, AT and Bhat, BM and Satyam, M (2001) Role of the cesium antimonide layer in the $Na_2KSb/Cs_3Sb$ photocathode. In: Journal of Applied Physics, 90 (12). pp. 6434-6439.
Natarajan, Aravind and Kalghatgi, AT and Bhat, BM and Satyam, M (2001) Role of the cesium antimonide layer in the Na2KSb/Cs3Sb photocathode. In: Journal of Applied Physics, 90 (12). pp. 6434-6439.
