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Conference Paper

Krupanidhi, SB and Hudait, MK and Modak, P and Hardikar, S and Kumar, Vikram and Agarwal, SK (1998) MOCVD epitaxy of GaAs/Ge heterostructures. In: International workshop on the Physics of Semiconductor Devices: IWPSD97, vol.1, 16-20 Dec. 1997, Delhi, India, pp. 262-270.

Hudait, MK and Modak, P and Hardikar, S and Rao, KSRK and Krupanidhi, SB (1998) Photoluminescence of Zn- and Si-doped GaAs epitaxial layers grown by MOCVD. In: International workshop on the physics of semiconductor devices: IWPSD 97, Vol. 3316, 16-20 Dec. 1997, Delhi, India, pp. 312-316.

Journal Article

Hardikar, S and Hudait, MK and Modak, P and Krupanidhi, SB and Padha, N (1999) Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodes at low temperatures. In: Applied Physics A: Materials Science & Processing, 68 (1). pp. 49-55.

Hudait, MK and Modak, P and Hardikar, S and Rao, KSRK and Krupanidhi, SB (1998) Comparative studies of Si-doped n-type MOVPE GaAs on Ge and GaAs substrates. In: Materials Science and Engineering B, 55 (1-2). pp. 53-67.

Hudait, MK and Modak, P and Hardikar, S and Krupanidhi, SB (1998) Photoluminescence studies on Si-doped GaAs/Ge. In: Journal of Applied Physics, 83 (8). pp. 4454-4461.