|
 | Up a level |
Gosain, DP and Bhatia, KL and Parthasarathy, G and Gopal, ESR (1987) Impurity states in Sb-doped amorphous semiconductors. In: Journal of Applied Physics, 62 (6). 2313 -2319.
Bhatia, KL and Gosain, DP and Parthasarathy, G and Gopal, ESR (1986) Bismuth-doped amorphous-germanium sulfidesemiconductors. In: Physical Review B, 34 (12). pp. 8786-8793.
Bhatia, KL and Gosain, DP and Parthasarathy, G and Gopal, ESR (1986) Morphological structure of bismuth-doped n-type amorphous germanium sulphide semiconductors. In: Journal of materials science letters, 5 (12). 1281 -1284.
Bhatia, KL and Gosain, DP and Parthasarathy, G and Gopal, ESR (1986) On the structural features of doped amorphous chalcogenide semiconductors. In: Journal of Non-Crystalline Solids, 86 (1-2). pp. 65-71.
Bhatia, KL and Gosain, DP and Parthasarathy, G and Gopal, ESR (1986) Pressure-induced first-order transition in layered crystalline semiconductor GeSe to a metallic phase. In: Physical Review B, 33 (2). pp. 1492-1494.
