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Brahma, Madhuchhanda and Bescond, Marc and Logoteta, Demetrio and Ghosh, Ram Krishna and Mahapatra, Santanu (2018) Germanane MOSFET for Subdeca Nanometer High-Performance Technology Nodes. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (3). pp. 1198-1204.
Ghosh, Ram Krishna and Brahma, Madhuchhanda and Mahapatra, Santanu (2014) Germanane: a Low Effective Mass and High Bandgap 2-D Channel Material for Future FETs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 (7). pp. 2309-2315.
Sengupta, Amretashis and Ghosh, Ram Krishna and Mahapatra, Santanu (2013) Performance Analysis of Strained Monolayer MoS2 MOSFET. In: IEEE Transactions on Electron Devices, 60 (9). pp. 2782-2787.
Ghosh, Ram Krishna and Mahapatra, Santanu (2013) Direct Band-to-Band Tunneling in Reverse Biased MoS2 Nanoribbon p-n Junctions. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 (1). pp. 274-279.
Ghosh, Ram Krishna and Mahapatra, Santanu (2013) Proposal for Graphene-Boron Nitride Heterobilayer-Based Tunnel FET. In: IEEE TRANSACTIONS ON NANOTECHNOLOGY, 12 (5). pp. 665-667.
Ghosh, Ram Krishna and Bhattacharya, Sitangshu and Mahapatra, Santanu (2013) k.p based closed form energy band gap and transport electron effective mass model for 100] and 110] relaxed and strained Silicon nanowire. In: SOLID-STATE ELECTRONICS, 80 . pp. 124-134.
Ghosh, Ram Krishna and Bhattacharya, Sitangshu and Mahapatra, Santanu (2012) Physics-Based Band Gap Model for Relaxed and Strained 100] Silicon Nanowires. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 (6). pp. 1765-1772.
