ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Browse by Author

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Item Type | No Grouping
Number of items: 3.

Journal Article

Baby, R and Venugopalrao, A and Chandrasekar, H and Raghavan, S and Rangarajan, M and Nath, DN (2022) Study of the impact of interface traps associated with SiN Xpassivation on AlGaN/GaN MIS-HEMTs. In: Semiconductor Science and Technology, 37 (3).

Kumar, VK and Rathkanthiwar, S and Rao, A and Ghosh, P and Dhar, S and Chandrasekar, H and Choudhury, T and Shivashankar, SA and Raghavan, S (2021) Role of Surface Processes in Growth of Monolayer MoS2: Implications for Field-Effect Transistors. In: ACS Applied Nano Materials, 4 (7). pp. 6734-6744.

Balasubramanian, K and Chandrasekar, H and Raghavan, S (2020) Carrier Transport in Graphene Field-Effect Transistors on Gated Polar Nitride Substrates. In: Physica Status Solidi (A) Applications and Materials Science, 217 (16).

This list was generated on Sun Dec 4 13:35:39 2022 IST.