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Khan, MA and Muralidharan, R and Chandrasekar, H (2023) Physical design guidelines to minimize area-specific ON-resistance for rated ON-current and breakdown voltage of GaN power HEMTs. In: Semiconductor Science and Technology, 38 (3).
Gowrisankar, A and Vanjari, SC and Bardhan, A and Venugopalarao, A and Chandrasekar, H and Muralidharan, R and Raghavan, S and Nath, DN (2022) AlGaN/GaN HEMTs on Silicon With a Graded-AlGaN Back-Barrier for RF Applications. In: 2022 IEEE International Conference on Emerging Electronics, ICEE 2022, 11- 14 Dec 2022, Bangalore.
Baby, R and Venugopalrao, A and Chandrasekar, H and Raghavan, S and Rangarajan, M and Nath, DN (2022) Study of the impact of interface traps associated with SiN Xpassivation on AlGaN/GaN MIS-HEMTs. In: Semiconductor Science and Technology, 37 (3).
Remesh, N and Chandrasekar, H and Venugopalrao, A and Raghavan, S and Rangarajan, M and Nath, DN (2021) Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications. In: Journal of Applied Physics, 130 (7).
Kumar, VK and Rathkanthiwar, S and Rao, A and Ghosh, P and Dhar, S and Chandrasekar, H and Choudhury, T and Shivashankar, SA and Raghavan, S (2021) Role of Surface Processes in Growth of Monolayer MoS2: Implications for Field-Effect Transistors. In: ACS Applied Nano Materials, 4 (7). pp. 6734-6744.
Balasubramanian, K and Chandrasekar, H and Raghavan, S (2020) Carrier Transport in Graphene Field-Effect Transistors on Gated Polar Nitride Substrates. In: Physica Status Solidi (A) Applications and Materials Science, 217 (16).
