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Gosain, DP and Bhatia, KL and Parthasarathy, G and Gopal, ESR (1987) Impurity states in Sb-doped amorphous semiconductors. In: Journal of Applied Physics, 62 (6). 2313 -2319.
Bhatia, KL and Gosain, DP and Parthasarathy, G and Gopal, ESR (1986) Bismuth-doped amorphous-germanium sulfidesemiconductors. In: Physical Review B, 34 (12). pp. 8786-8793.
Bhatia, KL and Gosain, DP and Parthasarathy, G and Gopal, ESR (1986) Morphological structure of bismuth-doped n-type amorphous germanium sulphide semiconductors. In: Journal of materials science letters, 5 (12). 1281 -1284.
Bhatia, KL and Gosain, DP and Parthasarathy, G and Gopal, ESR (1986) On the structural features of doped amorphous chalcogenide semiconductors. In: Journal of Non-Crystalline Solids, 86 (1-2). pp. 65-71.
Bhatia, KL and Gosain, DP and Parthasarathy, G and Gopal, ESR (1986) Pressure-induced first-order transition in layered crystalline semiconductor GeSe to a metallic phase. In: Physical Review B, 33 (2). pp. 1492-1494.
Bhatia, KL and Parthasarathy, G and Gopal, ESR (1985) Pressure induced effects in bulk amorphous n-type semiconductors(GeSe3.5)100âxBix. In: Journal of Non-Crystalline Solids, 69 (2-3). pp. 189-202.
Bhatia, KL and Sharma, AK and Gopal, ESR and Parthasarathy, G (1984) Study of effects of dopants on structure of vitreous semiconductors (GeSe3.5)100-xMx (M = Bi, Sb) using high pressure techniques. In: Solid State Communications, 51 (9). pp. 739-742.
Bhatia, KL and Parthasarathy, G and Gopal, ESR (1983) Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100-xBix at high pressure. In: Journal of Non-Crystalline Solids, 59-60 (2). pp. 1019-1021.
Katyal, SC and Padaki, VC and Bhat, PK and Gopal, ESR and Bhatia , KL (1978) Elastic properties of PbS-As2S3 glasses. In: Journal of Physics C: Solid State Physics, 11 (12). L479 -L482.
